Formulas Constantes físicas Semiconductores (T = 300 K) Silicio NC = 2.8 · 1019 cm−3 NV = 1.04 · 1019 cm−3 ni = 1.45 · 1010 cm−3 Eg = 1.12eV = 11.90 χ = 4.05eV 2 µn = 1350 cm V ·s 2 µp = 480 cm V ·s m?n = 1.08m0 m?p = 0.56m0 e = 1.6 · 10−19 C m0 = 9.1 · 10−31 Kg c = 2.998 · 108 m/s 0 = 8.854 · 10−12 F/m µ0 = 4π · 10−7 Tm/A kB = 1.38 · 10−23 J/o K h = 6.6 · 10−34 Js Estadística de semiconductores n0 = NC e− NC = 2 Ec −EF kT p0 = NV e− 3/2 2πm?n kT h2 E −E − F ikT F NV = 2 Arseniuro de Galio NC = 4.7 · 1017 cm−3 NV = 7.0 · 1018 cm−3 ni = 1.39 · 106 cm−3 Eg = 1.42eV = 13.10 χ = 4.07eV 2 µn = 8500 cm V ·s 2 µp = 400 cm V ·s m?n = 0.067m0 m?p = 0.48m0 Transporte en semiconductores EF −Ev kT Dn = µn kT e Jn = eDn dn + eµn nE dx 2πm? kT 3/2 p h2 p0 = ni e− n0 = ni e Germanio NC = 2.8 · 1019 cm−3 NV = 6.0 · 1018 cm−3 ni = 2.4 · 1013 cm−3 Eg = 0.66eV = 160 χ = 4.0eV 2 µn = 3600 cm V ·s 2 µp = 1800 cm V ·s m?n = 0.55m0 m?p = 0.37m0 Dp = µp kT e dp Jp = −eDp dx + eµp pE EF −EF i kT Excesos en semiconductores Dn ∂ (δn) δn ∂ (δn) ∂ 2 (δn) 0 + µ E + g − = n ∂x2 ∂x τn0 ∂t Dp ∂ (δp) δp ∂ (δp) ∂ 2 (δp) − µp E + g0 − = 2 ∂x ∂x τp0 ∂t Juntura PN Vbi = kT e Ln = ln √ NA ND n2i ; W = q 2s e D (Vbi − V ) NNAA+N ; ND Dn τn0 Lp = iD = eA Dn n Ln p0 + 1 Dp p Lp n0 h exp vD Vt i −1 q Dp τp0