Photodiodes

Introduction
Hamamatsu Photonics Solid State Division has developed
a variety of opto-electronic semiconductor devices. These
competitively priced high quality products are designed to
meet the requirements of general and critical applications.
Hamamatsu is committed to ongoing research in the optosemiconductor field, thereby insuring that all your future
semiconductor needs will be met.
This catalog provides general information and data
regarding Hamamatsu opto-semiconductors.
For more specific information please refer to our sectional
catalogs or individual product data sheets which are
available from our sales office or Hamamatsu representatives.
Table of Contents
Selection Guide
Types and Applications of Hamamatsu Opto-semiconductors .................................................... 2, 3
Sensors (Ultraviolet/Visible/Near IR)
Si Photodiodes ................................................................................................................................ 4
S1226/S1227 Series
(UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity) ................................ 4
S1336/S1337 Series (UV to IR, for Precision Photometry) ........................................................ 4
S5226/S5227 Series (UV to NIR, for Precision Photometry) ...................................................... 4
S2386/S2387 Series (Visible Light to IR, for General Photometry) ............................................ 5
For General Photometry (Visible Light Only/Visible Light to IR) ................................................. 5
Si PIN Photodiodes ......................................................................................................................... 6
Si PIN Photodiodes with Pre-amplifier ............................................................................................ 7
GaAsP Photodiodes ........................................................................................................................ 7
GaP Photodiodes ............................................................................................................................ 7
Si APDs (Avalanche Photodiodes) .................................................................................................. 8
Other Types of Si Photodiodes ....................................................................................................... 9
CCD Area Image Sensors ............................................................................................................. 10
CCD Area Image Sensors (Front-illuminated Types) ............................................................... 10
CCD Area Image Sensors (Back-illuminated Types) ................................................................ 10
N-MOS Linear Image Sensors ...................................................................................................... 11
C-MOS Linear Image Sensors ...................................................................................................... 11
Photo ICs ....................................................................................................................................... 12
PSDs (Position Sensitive Detectors) ............................................................................................. 13
CdS Photoconductive Cells ........................................................................................................... 14
Infrared Detectors
InGaAs PIN Photodiodes .............................................................................................................. 15
Ge Photodiodes ............................................................................................................................. 16
PbS/PbSe Photoconductive Detectors .......................................................................................... 16
InAs/InSb Photovoltaic Detectors, MCT (HgCdTe) Photoconductive Detectors ........................... 17
InSb Photoconductive Detector ..................................................................................................... 17
InGaAs Linear Image Sensors ...................................................................................................... 17
Pyroelectric Detectors ................................................................................................................... 18
Photocouplers
Photocouplers ............................................................................................................................... 18
Solid State Emitters
LEDs .............................................................................................................................................. 19
Applicable Equipment
APD Modules ................................................................................................................................ 20
Photosensor Amplifiers C2719, C6386 ......................................................................................... 20
Hybrid ICs for Pyroelectric Detectors H4741, H3651, H4018 Series ............................................ 20
Portable Infrared Detecting Units C4893 (1 to 2.9 µm) and C4894 (1.5 to 4.8 µm) ...................... 21
16×16-element Photodiode Array Detector Head C4675 .............................................................. 21
Charge Amplifier H4083 ................................................................................................................ 21
1
Selection Guide
Types and Applications of Hamamatsu Opto-semiconductors
Products
High Energy
Particles
Si Detectors
High Energy Physics, Nuclear Medicine,
Industrial Measuring Instruments
Photodiodes for
UV
Pollution Analyzers, Spectrophotometers,
Medical Instruments, UV Detectors,
Colorimeters
Schottky Type
GaAsP
Photodiodes
Pollution Analyzers, Spectrophotometers,
Colorimeters, UV Detectors
Schottky Type
GaP Photodiodes
UV Detectors
Filtered Si
Photodiodes
Camera EE systems, Exposure Meters, Auto-strobe, Autofocus, Illuminometers, Laboratory Photometers, copiers
Diffusion Type
GaAsP
Photodiodes
Camera EE systems, Exposure Meters, Autostrobe Illuminometers, Laboratory Photometers, Flame Monitors
Visible photoconductors
Camera EE systems, Exposure Meters, Autodimmers, Musical Instruments, Flame
Monitors, Melody Cards, Street Lights
Si Photodiodes
Optical Communications, Computers, Automatic Control Systems, Home Appliances, Car
Electronics, Photometric Instruments, Medical
Instruments, High Energy Physics
Si
Phototransistors
Photoelectric Switches, Photoelectric
Counters, Smoke Detectors
Photo ICs
Photoelectric Switches, Tape Mark Detection,
Paper Detection for Copiers or Printers,
Rotary Encoders
InGaAs,
Ge Photodiodes
Optical Communications, IR Laser Monitors,
Radiation Thermometers
PbS, PbSe Cells
Radiation Thermometers, Flame Monitors,
IR Photoelectric Switches, Moisture Meters,
Gas Analyzers, Spectrophotometers
InAs, InSb
IR Laser Detectors, Spectrophotometers,
Radiation Thermometers
MCT (HgCdTe)
Thermal Imaging, Radiation Thermometers,
FTIR Spectroscopy, CO2 Laser Detection
Photon Drag
Detectors
CO2 Laser Detection
Pyroelectric
Detectors
Automatic Doors, Intrusion Alarms,
Fire Detectors
Area
Image Sensors
Fluorescence Spectrometer, Raman
Spectrophotometer, Scientific Measuring
Instruments
Linear Image
Sensors
Multichannel Spectrophotometers,
Spectrum Analyzers, High Energy Physics
Photodiode
Arrays
Multichannel Spectrophotometers,
Color Analyzers, Spectrum Analyzers,
Position Detectors
Discrete
Type
Discrete
Detectors
Optical Disk Pickups, Position Detectors, Various
elements for auto focus and other applications.
Nondiscrete
Type
PSD (Position
Sensitive
Detectors)
Auto-focus, Range Finders, Displacement
Sensors, Laser Optics, Automatic Control
Systems, High Energy Physics
UV
Point
Sensors
Visible
Near IR
Sensors
IR
2-D
Image
Sensors
1-D
Position
Sensors
2
Major Applications
Products
Major Applications
Visible
LEDs (Light
Emitting Diodes)
Photoelectric Switches, Optical Fiber Communications
IR
LEDs (Light
Emitting Diodes)
Auto-focus, Photoelectric Switches, Optical Mark
Sensing, Optical Remote Control, Optical Communications, Automatic Control Systems
Photocouplers
Signal Interface, Triac Drivers, Audio/Video Instruments, Musical Instruments, Communication
Instruments
Photoreflectors
Paper Detectors for copiers and Printers, Tape End Detectors,
Position Detectors, Optical Mark Readers, Bar Code Detectors
Photointerrupters
Rotary Encoders, Timing Detectors for Copiers and
Printers, Tape End Detectors, Position Detectors
Emitters
Signal
Transfer
Type
Hybrid
Devices
Sensor
Type
● General Selection Guide by Wavelength
UV
Visible
Wavelength 0.2
0.4
Near IR
IR
0.6 0.8 1
2
4
6
8
10
20 (µm)
Si
GaAsP
GaP
SENSORS
Cds
Ge
InGaAs
PbS
PbSe
InAs (-196°C)
InSb (-196°C)
MCT (-196°C)
EMITTERS
Pyroelectric Detectors
GaAs LED
GaA|As LED
GaAs/GaA|As LD
3
Photodiodes
Si Photodiodes
Type No.
(Unless otherwise noted, Typ. Ta=25 °C)
Package
Active
Area
Spectral
Response
Range
λ
(mm)
(mm)
(nm)
Short Circuit
Dark
Rise Time
Terminal
Peak
Photo
Shunt
Capacitance
Current
Current
tr
Sensitivity Sensitivity
Resistance
Ct
Isc
ID
10 to 90 %
Wavelength
S
Rsh
VR=10 mV VR=0 V
f=10 kHz
100 lx
λp
λ=λp
VR=10 mV
Max.
RL=1 kΩ
VR=0 V
2856 K
(nm)
(A/W)
(µA)
(pA)
(µs)
(pF)
(GΩ)
NEP
λ=λp
(W/Hz1/2)
Maximum
Ratings
Reverse
Voltage
VR Max.
(V)
S1226/S1227 Series (UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity)
S1226-18BQ
TO-18
-18BK
-5BQ
-5BK
-44BQ
2.4 × 2.4
Metal
TO-5
3.6 × 3.6
-44BK
-8BQ
-8BK
S1227-16BQ
-16BR
-33BQ
-33BR
-66BQ
1.1 × 1.1
TO-8
5.8 × 5.8
2.7 × 15
1.1 × 5.9
6 × 7.6
2.4 × 2.4
Ceramic
-66BR
-1010BQ
-1010BR
8.9 × 10.1
5.8 × 5.8
15 × 16.5
10 × 10
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
720
0.66
2
0.15
35
50
1.6 × 10 -15
2.9
5
0. 5
160
20
2.5 × 10 -15
5.9
10
1
380
10
3.6 × 10 -15
16
20
2
950
5
5.0 × 10 -15
170
20
160
20
0.36
320 to 1000
190 to 1000
320 to 1000
5
190 to 1000
0.36
3.2
320 to 1000
0.43
3.7
190 to 1000
0.36
3.0
0.43
3.7
0.36
16
320 to 1000
0.43
19
190 to 1000
0.36
44
320 to 1000
0.43
53
320 to 1000
190 to 1000
720
5
0.5
2.5 × 10 -15
2.1 × 10 -15
2.5 × 10 -15
2.1 × 10 -15
5.0 × 10 -15
20
2
950
5
50
7
3000
2
1.2
20
0.1
20
2
5.7 × 10 -15
5
30
0.2
65
1
8.1 × 10 -15
10
50
0.5
150
0.6
1.0 × 10 -14
28
100
1
380
0.4
1.3 × 10 -14
5
4.2 × 10 -15
8.0 × 10 -15
6.7 × 10 -15
S1336/S1337 Series (UV to IR, for Precision Photometry)
S1336-18BQ
TO-18
-18BK
-5BQ
-5BK
-44BQ
2.4 × 2.4
Metal
TO-5
3.6 × 3.6
-44BK
-8BQ
-8BK
S1337-16BQ
-16BR
-33BQ
-33BR
-66BQ
TO-8
5.8 × 5.8
2.7 × 15
1.1 × 5.9
6 × 7.6
2.4 × 2.4
Ceramic
-66BR
-1010BQ
-1010BR
S2551
1.1 × 1.1
8.9 × 10.1
5.8 × 5.8
15 × 16.5
10 × 10
190 to 1100
320 to 1100
190 to 1100
320 to 1100
190 to 1100
960
0.5
320 to 1100
190 to 1100
320 to 1100
5
190 to 1100
0.5
5.3
320 to 1100
0.62
6.2
190 to 1100
0.5
5.0
0.62
6.2
0.5
27
320 to 1100
0.62
33
190 to 1100
0.5
78
320 to 1100
0.62
95
0.6
30
320 to 1100
190 to 1100
Ceramic 3.0 × 40.0 1.2 × 29.1 320 to 1060
960
920
8.1 × 10 -15
30
0.2
65
1
6.5 × 10 -15
8.1 × 10 -15
6.5 × 10 -15
1.3 × 10 -14
100
1
380
0.4
200
3
1100
0.2
1 (nA)
0.6
350
0.03
3.9 × 10 -14
15
100
1
430
1
1.1 × 10 -14
40
300
3
1300
0.5
1.6 × 10 -14
5
1.0 × 10 -14
1.8 × 10 -14
1.5 × 10 -14
30
S5226/S5227 Series (UV to NIR, for Precision Photometry)
S5226-8BQ
S5227-66BQ
S5227-1010BQ
4
Metal
Ceramic
TO-8
8.9 × 10.1
15 × 16.5
5.8 × 5.8
10 × 10
190 to 1000
740
0.36
5
Photodiodes
Si Photodiodes
Type No.
(Unless otherwise noted, Typ. Ta=25 °C)
Package
Active
Area
Spectral
Response
Range
λ
(mm)
(mm)
(nm)
Short Circuit
Dark
Rise Time
Terminal
Peak
Photo
Shunt
Capacitance
Current
Current
tr
Sensitivity Sensitivity
Resistance
Ct
Isc
ID
10 to 90 %
Wavelength
S
Rsh
VR=10 mV VR=0 V
f=10 kHz
100 lx
λp
λ=λp
VR=10 mV
Max.
RL=1 kΩ
VR=0 V
2856 K
NEP
λ=λp
(µs)
(pF)
(GΩ)
(W/Hz1/2)
2
0.4
140
100
6.8 × 10 -16
6.0
5
1.8
730
50
9.6 × 10 -16
12
20
3.6
1600
3.9 × 4.6
17
30
5.5
2300
25
1.4 × 10 -15
5.8 × 5.8
33
50
10
4300
10
2.1 × 10 -15
5
1.8
730
50
9.9 × 10 -16
31
50
10
4300
10
2.2 × 10 -15
91
200
33
12000
5
3.1 × 10 -15
32
1 (nA)
11
5000
10
2.2 × 10 -15
(nm)
(A/W)
(µA)
(pA)
Maximum
Ratings
Reverse
Voltage
VR Max.
(V)
S2386/S2387 Series (Visible Light to IR, for General Photometry)
S2386-18K
TO-18
-18L
-5K
-44K
2.4 × 2.4
Metal
TO-5
-45K
-8K
TO-8
1.3
1.1 × 1.1
3.6 × 3.6
5.0
320 to 1100
960
0.6
S2387-16R
2.7 × 15
1.1 × 5.9
6.0
-33R
6 × 7.6
2.4 × 2.4
5.8
8.9 × 10.1
5.8 × 5.8
15 × 16.5
10 × 10
-66R
Ceramic
-1010R
S4036
Ceramic 3.0 × 40.0
320 to 1100
1.2 × 29.1 320 to 1100
960
960
0.58
0.58
30
30
5
For General Photometry (Visible Light Only/Visible Light to IR)
Type No.
Package
(mm)
Active
Area
Spectral
Response
Range
λ
(mm)
(nm)
S1087
6×5
1.3 × 1.3
S1133
8×6
2.4 × 2.8
6×5
1.3 × 1.3
S1087-01
Ceramic
S1133-01
8×6
S1133-14
2.4 × 2.8
S1787-04
S1787-08
8×6
2.4 × 2.8
4 × 4.8
1.3 × 1.3
4.5 × 5.5
2.4 × 2.8
S1787-12
S4011
S2833
S5493
S5627
S4011-02
S5557
320 to 730
4 × 4.8
7 × 7.8
2.4 × 2.8
S4797-01
4 × 4.8
1.3 × 1.3
S3407-01
4.5 × 5.5
S6931
4.5 × 5.5
(nm)
(A/W)
(%)
560
0.3
960
0.58
320 to 1000
720
0.4
320 to 730
560
0.3
320 to 1100
960
0.58
320 to 1000
650
0.35
320 to 730
560
0.3
320 to 1100
4.5 × 5.5
7 × 7.8
λ=λp
540
10
2.4 × 2.8
960
720
(pA)
0.5
200
0.65
2.5
700
0.5
200
2.5
700
20
0.5
200
10
2.5
700
0.5
200
2.5
700
0.65
3.4
–
Maximum
Rise Time
Terminal
Shunt
tr
Capacitance Resistance Ratings
Ct
10 to 90 %
Rsh
Reverse
f=10 kHz VR=10 mV
VR=0 V
Voltage
RL=1 kΩ
Min.
VR=0 V
VR Max.
(µs)
(pF)
(GΩ)
(V)
0.16
10
5.6
2.3
12 * 1
0.26
13 *1
0.95
0.58
0.48
(µA)
5.6
–
320 to 1000
Dark
Current
ID
VR=1 V
Max.
–
35
0.4
Short Circuit
Current
Isc
100 lx
2856 K
1.3
1.3 × 1.3
S2833-01
S6926
λp
IR
Sensitivity
Ratio
R/W
320 to 1100
320 to 840
Plastic
Peak
Photo
Sensitivity Sensitivity
Wavelength
S
10
20
10
10
10
1
10
1.0
100
10
3000
0.1
0.25
50
2
700
0.5
1.9
10
1.9
100
0.5
200
6.5
10
2.5
700
0.2
50
0.5
200
1.2
3.9
20
10
10
10
4.2
*1: All components except for the filters are shaded from the light.
5
Photodiodes
Si PIN Photodiodes
Type No.
(Unless otherwise noted, Typ. Ta=25 °C)
Package
Active Area
(mm)
(mm)
S5971
φ1.2
S5972
φ0.8
S5973
φ0.4
S5973-01
Spectral
Response
Range
λ
(nm)
320 to 1060
Peak
Photo
Sensitivity Sensitivity
Wavelength
S
λ=λp
λp
(nm)
Cut-off
Frequency
fc
(nA)
(MHz)
Maximum Ratings
Terminal
Capacitance
Ct
f=1 MHz
(pF)
NEP
(W/Hz1/2)
0.64
1
100
800
0.57
0.5
500
0.52
0.1
1500
1.5
1.5 × 10 -15
(VR=10 V)
0.32
(λ=410 nm)
0.1
(VR=3.3 V)
1200
(VR=3.3 V)
1.6
(VR=3.3 V)
4.1 × 10 -15
(VR=3.3 V)
0.6
2
(VR=10 V)
25
(VR=10 V)
3
(VR=10 V)
6.7 × 10 -15
(VR=10 V)
10
(VR=20 V)
30
(VR=20 V)
10
(VR=20 V)
9.4 × 10 -15
(VR=20 V)
10
(VR=20 V)
20
(VR=20 V)
20
(VR=20 V)
1.3 × 10 -14
(VR=20 V)
10
(VR=24 V)
40
(VR=24 V)
18
(VR=24 V)
2.1 × 10 -14
(VR=24 V)
10
(VR=24 V)
45
(VR=24 V)
7
(VR=24 V)
1.7 × 10 -14
(VR=24 V)
3
320 to 1000
760
Reverse
Voltage
VR Max.
(V)
Power
Dissipation
P
20
50
30
100
(mW)
7.4 × 10 -15
(VR=10 V)
900
TO-18
S5973-02
(A/W)
Dark
Current
ID
Max.
3.1 × 10 -15
(VR=10 V)
S5821
S5821-01
Metal
φ1.2
S5821-02
320 to 1100
960
320 to 1100
960
S5821-03
2.4 × 2.8
S1223
TO-5
S1223-01
S3071
TO-8
3.6 × 3.6
320 to 1060
920
S3072
TO-5
φ3.0
S5106
8.8 × 10.6
5×5
5
(VR=10 V)
20
(VR=10 V)
40
(VR=10 V)
1.6 × 10 -14
(VR=10 V)
S5107
14.5 × 16.5
10 × 10
10
(VR=10 V)
10
(VR=10 V)
150
(VR=10 V)
2.4 × 10 -14
(VR=10 V)
S7509
6.5 × 15.35
2 × 10
5
(VR=10 V)
20
(VR=10 V)
40
(VR=10 V)
1.8 × 10 -14
(VR=10 V)
S7510
11.5 × 14.8
6 × 11
10
(VR=10 V)
15
(VR=10 V)
80
(VR=10 V)
2.5 × 10 -14
(VR=10 V)
14.5 × 12.7
10 × 10
6
(VR=70 V)
40
(VR=70 V)
40
(VR=70 V)
3.8 × 10 -14
(VR=70 V)
14
(VR=10V)
9.0 × 10
(VR=10 V)
25
(VR=10 V)
3.2 × 10 -15
(VR=10 V)
40
(VR=10 V)
10
(VR=10 V)
2.0 × 10 -15
(VR=10 V)
80
(VR=5 V)
3
(VR=5 V)
5.3 × 10 -15
(VR=5 V)
60
(VR=10 V)
12
(VR=5 V)
8.7 × 10 -15
(VR=5 V)
10
(VR=12 V)
25
(VR=12 V)
15
(VR=12 V)
5
(VR=10 V)
60
(VR=10 V)
15
(VR=10 V)
Chip carrier
S3590-08
Ceramic
S4707-01
4.5 × 5.5
S2973-01
0.72
320 to 1100
S3321
4 × 4.8
S3321-04
0.66
5
(VR=10 V)
2.4 × 2.8
1×3
0.56
φ0.8
0.53
320 to 1100
S2506-04
800 to 1100
2.77 × 2.77
S6786
S6775
5.5 × 4.8
Plastic
4 × 4.8
S7482
S5052
3.8 × 4.8
φ3.0
(lens)
S6977-01
960
0.68
7.9 × 8.75
50
(VR=10 V)
50
(VR=10 V)
500
(VR=2.5 V)
6
(VR=2.5 V)
600
(VR=2.5 V)
3
(VR=2.5 V)
1.5 × 10 -14
(VR=10 V)
0.5
0.3
(VR=2.5 V)
320 to 1000
800
0.46
0.3
(VR=5 V)
200
(VR=5 V)
4
(VR=5 V)
5.5 × 10 -15
(VR=5 V)
320 to 1060
900
0.53
1
(VR=5 V)
60
(VR=5 V)
3
(VR=5 V)
5.3 × 10 -15
(VR=5 V)
2
(VR=5 V)
20
(VR=5 V)
2.5
(VR=5 V)
7.2 × 10 -15
(VR=5 V)
10
(VR=12 V)
25
(VR=12 V)
15
(VR=12 V)
1.0 × 10 -14
(VR=12 V)
5
(VR=10 V)
60
(VR=10 V)
15
(VR=10 V)
1.5 × 10 -14
(VR=10 V)
10
(VR=10 V)
15
(VR=10 V)
40
(VR=10 V)
5
(VR=10 V)
50
(VR=10 V)
50
(VR=10 V)
800 to 1100
900
0.65
0.7
960
700 to 1100
320 to 1060
0.68
900
0.65
20
50
150
35
50
2.0 × 10 -14
(VR=10 V)
760
0.56
100
1.9 × 10 -14
(VR=10 V)
320 to 1000
960
100
1.8 × 10 -14
(VR=10 V)
5
(VR=10 V)
320 to 1100
φ14.0
(lens)
40
(VR=10 V)
30
8.1 × 10 -15
(VR=12 V)
0.65
S6801
φ16 × 13.3
15
(VR=10 V)
50
1.0 × 10 -14
(VR=12 V)
900
320 to 1100
φ7.0
(lens)
10
(VR=10 V)
50
-15
320 to 1060
320 to 1060
S6968
0.7
700 to 1100
S6436
S6801-01
0.65
700 to 1100
S6036
S6036-01
900
φ0.8
φ0.6
20
(VR=10 V)
0.7
320 to 1100
S6775-01
S5573
0.56
960
600 to 1100
320 to 1060
7 × 7.8
1
(VR=5 V)
0.65
S2506-02
S7481
900
2×2
S2506-10
1
(VR=10 V)
2
(VR=10 V)
320 to 1060
S7329-01
S6967
960
1.1 × 1.1
S5077
6
0.6
φ5.0
3.6 × 10 -15
(VR=2.5 V)
1.8 × 10 -14
(VR=10 V)
1.9 × 10 -14
(VR=10 V)
2 × 10 -14
(VR=10 V)
20
20
50
150
35
50
Photodiodes
Si PIN Photodiodes with Pre-amplifier
Type No.
Package
Active Area
(mm)
S6468
S6468-02
S6468-05
TO-18
Peak
Sensitivity
Wavelength
λp
Photo
Sensitivity
S
λ=830 nm
Transimpedance
Gain
RT
Power Supply
Current
Icc
Max.
(nm)
(nm)
(mV/µW)
(kΩ)
(mA)
320 to 1060
900
16.5
30
11
20
9.5
18
6.5
5
10
18
φ0.8
320 to 1000
800
φ0.4
S6468-10
[Unless otherwise noted, Typ. Ta=25 °C, RL=500 Ω, CL=13 pF (S6468-10: CL=3 pF)]
Spectral
Response
Range
λ
Output Bias
Voltage
Vo
Cut-off
Frequency
fc
Recommended
Supply
Voltage
Vcc
(V)
3
GaAsP Photodiodes
Type No.
(V)
(MHz)
0.65
15
0.80
35
1.55
50
1.4
100
5
(Unless otherwise noted, Typ. Ta=25 °C)
Package
Active
Area
Spectral
Response
Range
λ
(mm)
(mm)
(nm)
Peak
Photo
Sensitivity Sensitivity
Wavelength
S
λp
λ=λp
(nm)
(A/W)
NEP
λ=λp
Short Circuit
Shunt
Current
Resistance
Isc
Rsh
100 lx
VR=10 mV
2856 K
(W/Hz1/2)
(µA)
(GΩ)
Dark
Current
ID
VR=1 V
Max.
(pA)
Rise Time
Terminal
Maximum
Capacitance Ratings
tr
Ct
10 to 90 %
Reverse
f=10 kHz
VR=0 V
Voltage
RL=1 kΩ
VR=0 V
VR Max.
(V)
(µs)
(pF)
Diffusion Types
G1115
TO-18
1.3 × 1.3
1.5 × 10 -15
0.15
80
10
1
300
G1116
TO-5
2.7 × 2.7
2.5 × 10 -15
0.6
30
25
4
1400
6000
G1117
TO-8
5.6 × 5.6
G1118
Ceramic (5 × 6)
1.3 × 1.3
G1120
Ceramic (8.9 × 10.1)
5.6 × 5.6
300 to 680
640
0.3
3.5 × 10 -15
2.5
15
50
15
1.5 × 10 -15
0.15
80
10
1
300
3.5 × 10 -15
2.5
15
50
15
6000
G3067
TO-18
1.3 × 1.3
1.5 × 10 -15
0.95
80
10
1
300
G2711-01
Plastic
1.3 × 1.3
1.5 × 10 -15
0.18
80
10
1
300
G1735
TO-18
1.3 × 1.3
2.0 × 10 -15
0.25
25
20
0.5
250
G1736
TO-5
2.7 × 2.7
3.2 × 10 -15
1.1
10
50
1.8
1200
4500
G1737
TO-8
5.6 × 5.6
G1738
Ceramic (5 × 6)
1.3 × 1.3
G1740
Ceramic (8.9 × 10.1)
G3297
G5645
G5842
G6262
TO-18
Plastic
4.5 × 10 -15
5
5
100
10
2.0 × 10 -15
0.25
25
20
0.5
250
5.6 × 5.6
4.5 × 10 -15
5
5
100
10
4500
1.3 × 1.3
2.0 × 10 -15
1.8
25
20
0.5
250
90 (nA) *1
80
50 *2
3
80
1800
0.8 × 0.8
400 to 760
710
0.4
300 to 580
470
0.28
2.3 × 10 -15
260 to 400
370
0.06
7.6 × 10 -15
–
280 to 580
470
0.2
2.3 × 10 -15
65 (nA) *1
5.8 × 10 -15
0.3
15
50
3.5
190 to 680
610
0.18
8.0 × 10 -15
1.2
8
100
12
7000
5
5
Schottky Types
G1126-02
TO-5
2.3 × 2.3
G1127-02
TO-8
4.6 × 4.6
G2119
Ceramic (15 × 16.5)
10.1 × 10.1
2.4 × 10 -14
6
0.7
5000
55
25000
G1746
TO-5
2.3 × 2.3
6.5 × 10 -15
0.65
8
100
3
1600
G1747
TO-8
4.6 × 4.6
1.2 × 10 -14
2.4
2.5
200
12
6000
5.4 × 10 -15
0.05 *1
40
25
5
400
7.6 × 10 -15
0.3 *1
20
50
10
1500
1.1 × 10 -14
0.9 *1
10
100
30
5000
190 to 760
710
0.22
190 to 550
440
0.12
5
GaP Photodiodes
G1961
TO-18
1.1 × 1.1
G1962
TO-5
2.3 × 2.3
G1963
TO-8
4.6 × 4.6
5
*1: 1000 lx
*2: VR=5 V
7
Photodiodes
Si APDs (Avalanche Photodiodes)
Si APDs have an internal gain mechanism and are high sensitive devices.
APPLICATIONS
• Optical fiber communication
• Spatial light transmission
• Low-light-level detection, etc.
(Unless otherwise noted, Typ. Ta=25 °C)
*1
Type No.
Package
*2
*2
*2
*2
Spectral
Response
Range
λ
Peak
Sensitivity
Wavelength
λp
Quantum
Efficiency
M=1
λ=λp
Break Down
Voltage
VBR
ID=100 µA
Dark Current
ID
Max.
Cut-off
Frequency
fc
RL=50 Ω
Terminal
Capacitance
Ct
(nm)
(nm)
(%)
(V)
(nA)
(MHz)
(pF)
φ0.2
0.5
1000
1.5
φ0.5
1
900
3
2
600
6
φ1.5
5
400
10
φ3.0
10
120
40
60 (λ=800 nm)
φ5.0
30
40
95
40 (λ=800 nm)
φ0.2
0.5
1000
1.5
φ0.5
1
900
3
φ1.0
2
600
6
12
Active Area
(mm)
Gain
M
Low-bias Operation Types (for 800 nm Band)
S2381
S2382
S5139 *3
TO-18
S2383
S2383-10 *
S3884
S2384
S2385
100 (λ=800 nm)
φ1.0
4
TO-5
TO-8
400 to 1000
800
75
150
Low-temperature Coefficient Types (for 800 nm Band)
S6045-01
S6045-02
TO-18
S6045-03
S6045-04
S6045-05
S6045-06
TO-5
TO-8
φ1.5
400 to 1000
800
75
200
100 (λ=800 nm)
5
350
φ3.0
10
80
50
60 (λ=800 nm)
φ5.0
30
35
120
40 (λ=800 nm)
Short-wavelength Enhanced Types (for 620 nm Band)
S5343
TO-18
φ1.0
S5344
TO-5
φ3.0
S5345
TO-8
φ5.0
200 to 1000
*1: The range that allows multiplication.
*2: Measured with the gain listed in this specification table.
*3: Window material: lens type borosilicate glass.
*4: S2383-10 is shilded around the element.
8
620
80
150
10
250
15
100
25
120
1000
8
320
50 (λ=650 nm)
Photodiodes
Other Types of Si Photodiodes
Si Photodiodes with Pre-amplifier
Type No.
S1406 Series
Active Area
(mm)
Feature
2.4 × 2.4
Uses a photodiode chip of the S1226 or S1336
series and a borosilicate glass or quartz glass
window. Low noise operation suitable for precision
measurement at low light levels.
S5590
2.4 × 2.4
S5591
5.8 × 5.8
Type No.
S2684 Series
Low noise, guartz glass
For precision photometry of low-level light
10 × 10
Type No.
One-stage TE-cooled, borosilicate glass
Low noise, for precision photometry of low-level light
S6204-02
Type No.
(mm)
S3477-01
S2592-01
S3477-03
S2592-02
S3477-04
TO-66
TO-8
720
190 to 1100
Metal package with a BNC connector
555
TO-5
(mm)
Spectral Response
Range
λ
(nm)
400 to 540
460
2.4 × 2.8
480 to 600
540
590 to 720
660
Active Area
S6430-01
A more humidity-resistant Si photodiode with an improved temperature-resistant cycle
TO-8
TO-66
960
Type No.
Package
Spectral
Response
Range
λ
(nm)
Active
Area
TO-8
(mm)
Phototransistors
Type No.
S2829
S4404-01
Package
Peak Sensitivity
Wavelength
λp
(nm)
Photocurrent
1000 lx
VCE=5 V
(mA)
850
1.0
870
2.8
Plastic with Lens
Active
Area
(mm)
S2281
S2281-01
S2281-04
Spectral
Response
Range
λ
(nm)
Peak
Sensitivity
Wavelength
λp
(nm)
190 to 1100
φ11.3
(100 mm2) 190 to 1000
φ7.98
(50 mm2)
190 to 1100
S6865-01
Plastic
2×2
S6865-02
Ceramic
2.4 × 2.8
S7123-01
Plastic
2.46 × 2.46
S7123-02
Ceramic
2.4 × 2.8
320 to 1100
960
320 to 840
540
Type No.
S4111 Series
Feature
S6560
Package
Suppressed IR sensitivity,
low dark current
S4113 Series
Suppressed IR sensitivity,
high-speed response
S4114 Series
Low terminal capacitance,
high-speed response
S4111-14
High IR sensitivity,
low dark current
-55 to +125
-40 to +125
-55 to +125
Spectral
Response
Range
λ
(nm)
Peak
Sensitivity
Wavelength
λp
(nm)
Detection range
Plastic
760 to 1100
960
± 50
(°)
Applications: Incident angle detection (directed remote control, etc.) of infrared LED
and solar light, tracking light sources such as LED and solar light (toys, etc.)
(mm)
960
Metal package with a BNC
connector
720
960
(Unless otherwise noted, Typ. Ta=25 °C)
Number of
Element
Active Area
Per
Element
Spectral
Response
Range
λ
Peak
Sensitivity
Wavelength
λp
Photo
Sensitivity
S
λ=λp
Dark Current
ID
VR=10 V
Max.
(mm)
(nm)
(nm)
(A/W)
(nA)
190 to 1100
960
0.58
High IR sensitivity,
low dark current
S4112 Series
-40 to +125
Package
Si Photodiode Arrays
Type No.
Peak
Storage
Sensitivity
Temperature
Wavelength
Tstg
λp
(°C)
(nm)
Incident Angle Sensors (without Lenses)
Si Photodiodes with BNC Connector
Type No.
Peak Sensitivity
Wavelength
λp
(nm)
Si Photodiodes
TO-66
5.8 × 5.8
S2592-04
S6429-01
TO-8
960
190 to 1000
Package
TO-66
35
S3477-02
Peak Sensitivity Wavelength
λp
(nm)
S6428-01
2.4 × 2.4
S2592-03
Type No.
Package
720
190 to 1100
10 ± 2
Monochromatic Color Sensors
Peak
Cooling
Sensitivity
Temperature
Wavelength
∆T
λp
(nm)
(°C)
190 to 1000
254, 340, 405, 500
520, 560, 650 700
S7160-01
TE-cooled Type Si Photodiodes
Active
Area
Sensitivity Wavelength
Spectrum Width
FWHM
(nm)
S7160
φ13 mm Lens Two-stage TE-cooled, very low noise
Spectral
Response
Range
λ
(nm)
Peak Sensitivity Wavelength
λp
(nm)
Si Photodiodes with Visual Sensitivity Compensation Filter
Two-stage TE-cooled, sapphire glass
Low noise, for precision photometry of low-level light
S6204
S6204-03
Monochromatic Si Photodiodes
Terminal
Capacitance
Ct
f=10 kHz
VR=10 V
(pF)
Rise Time
tr
VR=10 V
RL=1 kΩ
λ=655 nm
(µs)
120
0.05
0.30
140
35, 38, 46
0.9 × 4.4
720
0.45
190 to 1000
16
0.9 × 1.45
190 to 1100
0.15
70
0.15
800
0.50
0.30
20
0.05
960
0.58
0.01
200
0.5
9
Image Sensors
CCD Area Image Sensors
The CCD area image sensors (front-illuminated and back-illuminated types) are low-light-level detection FFT-CCD image sensors
developed for measurement applications. Using binning, these can be used as linear image sensors, making them ideal for spectral
analysis and other similar applications. In binning operations, the S/N and signal processing speed are far better than those achieved
with external digital signal addition. Moreover, low noise, a low dark output (MPP mode operation) and large saturation load volume
result in a wide dynamic range, enabling longterm integration suitable for detection of faint light.
CCD Area Image Sensors (Front-illuminated Types)
The S7010/S7011/S7015 series have a pixel size of 24 × 24 µm, and active area from 12.288 (H) × 1.44 (V) mm2 (512 × 60 pixels) to
24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels) are supported.
Type No.
Cooling Types
Number of
Total Pixel
Number of Active
Active Area
Pixels
[mm (H) × mm (V)]
S7010-0906
532 × 64
512 × 60
12.288 × 1.44
S7010-0907
532 × 128
512 × 124
12.288 × 2.976
532 × 256
512 × 252
12.288 × 6.048
1044 × 64
1024 × 60
24.576 × 1.44
S7010-1007
1044 × 128
1024 × 124
24.576 × 2.976
S7010-1008
1044 × 256
1024 × 252
24.576 × 6.048
S7011-0906
532 × 64
512 × 60
12.288 × 1.44
S7011-0907
532 × 128
512 × 124
12.288 × 2.976
S7010-0908
S7010-1006
S7011-1006
S7011-1007
Non-cooled Types
One-stage TEcooled Types
1044 × 64
1024 × 60
24.576 × 1.44
1044 × 128
1024 × 124
24.576 × 2.976
S7015-0908
532 × 256
512 × 252
12.288 × 6.048
S7015-1008
1044 × 256
1024 × 252
24.576 × 6.048
CCD Area Image Sensors (Back-illuminated Types)
Because the S7030/S7031 series are back-illuminated types, an extremely high quantum efficiency is achieved from the ultraviolet to
the visible light regions.
The pixel size is 24 × 24 µm, and active area from 12.288 (H) × 1.392 (V) mm2 (512 × 58 pixels) to 24.576 (H) × 6.000 (V) mm2 (1024
× 250 pixels) are supported.
Type No.
Cooling Types
Number of
Total Pixel
Number of Active
Active Area
Pixels
[mm (H) × mm (V)]
● Spectral Response
532 × 64
512 × 58
12.288 × 1.392
100
S7030-0907
532 × 128
512 × 122
12.288 × 2.928
90
S7030-0908
532 × 256
512 × 250
12.288 × 6.000
Non-cooled Types
1044 × 64
1024 × 58
24.576 × 1.392
S7030-1007
1044 × 128
1024 × 122
24.576 × 2.928
S7030-1008
1044 × 256
1024 × 250
24.576 × 6.000
S7030-1006
S7031-0906
532 × 64
512 × 58
12.288 × 1.392
S7031-0907
532 × 128
512 × 122
12.288 × 2.928
532 × 256
512 × 250
12.288 × 6.000
1044 × 64
1024 × 58
24.576 × 1.392
S7031-1007
1044 × 128
1024 × 122
24.576 × 2.928
S7031-1008
1044 × 256
1024 × 250
24.576 × 6.000
S7031-0908
S7031-1006
One-stage TEcooled Types
QUANTUM EFFICIENCY (%)
S7030-0906
(Typ. Ta=25 ˚C)
BACK
THINNED
TYPES
80
70
60
50
40
30
20
FRONT
ILLUMINATED
TYPES
10
0
200
400
600
800
1000
1200
WAVELENGTH (nm)
KMPDB0038EA
10
Image Sensors
N-MOS Linear Image Sensors
N-MOS linear image sensors are self-scanning photodiode arrays designed as sensors for multi-channel spectrophotometry and other
applications. The scanning circuit is configured of an N-channel MOS transistor, and because it can be driven with a very low power
consumption, handling is simple and easy. The various photodiodes offer broad photocathodes and a high level of ultraviolet sensitivity,
while the noise level is extremely low, making it possible to obtain signals with a high S/N ratio even under very faint incident light
conditions.
Current
Output
Types
Voltage
Output
Types
TE-cooled
Types
Feature
●Low power dissipation
●Superior linearity
●Wide dynamic range
●Box-car output waveform
●Simple driver circuit
●Wide dynamic range
●Enable a long exposure time
●Wide dynamic range
●High sensitivity in IR range
IR-enhanced ●High sensitivity in IR range
Types
●Useful for soft X-ray detection
Dual Types
●Dual sensors on one chip
Linear
Variable
Filter Type
●Spectrophotometry in visible
●Used without grating
Type No.
Number of
Pixels
Pixel Size
(µm)
S3901 Series
128, 256, 512
50 × 2500
S3904 Series
256, 512, 1024
25 × 2500
S3902 Series
128, 256, 512
50 × 500
S3903 Series
256, 512, 1024
25 × 500
S3921 Series
128, 256, 512
50 × 2500
S3924 Series
256, 512, 1024
25 × 2500
S3922 Series
128, 256, 512
50 × 500
S3923 Series
256, 512, 1024
25 × 500
S5930 Series
256, 512
50 × 2500
S5931 Series
512, 1024
25 × 2500
S5932 Series
256, 512
50 × 2500
S5933 Series
512, 1024
25 × 2500
S4871 Series
128, 256, 512
50 × 2500
S4874 Series
256, 512, 1024
25 × 2500
S4801 Series
256 × 2, 512 × 2
50 × 2500
S3901-256LVF
256
50 × 2500
● Spectral Response
(Typ. Ta=25 ˚C)
0.5
IR-ENHANCED
TYPES
SPECTRAL RESPONSE (A/W)
Type
0.4
0.3
0.2
STANDARD
TYPES
0.1
0
200
400
600
800
1000
1200
WAVELENGTH (nm)
KMPDB0039EA
C-MOS Linear Image Sensors
C-MOS linear image sensors are self-scanning photodiode arrays designed as sensors for multi-channel spectrophotometry and other
applications. The transistor is designed with a C-MOS configuration. The photodiode has a broad photocathode and a high level of
ultraviolet sensitivity, with stable characteristics under ultraviolet illumination. The low dark current and large saturation load enable
signals to be obtained with a high S/N ratio. Also, the C-MOS configuration of the signal processing circuit includes an internal integration
amplifier and clamping circuit, enabling simple configuration of external circuits. The integration amplifier and clamping circuit result in
low noise and enable boxcar waveform output to be obtained which can be handled easily. Switching of the amount of integration carried
out on external input by the integration amplifier makes it possible to change the readout gain in two stages. The 5 V single power supply
is easily driven, while scanning is possible at a maximum data rate of 200 kHz.
Type No.
Number of Pixel
Pixel Size
(µm)
Active Area
[mm (H) × mm (V)]
● Spectral Response
(Typ. Ta=25 ˚C)
0.2
256
S5461-512Q
512
S5464-512Q
512
S5464-1024Q
1024
S5462-256Q
256
S5462-512Q
512
S5463-512Q
512
S5463-1024Q
1024
50 × 2500
25 × 2500
50 × 500
25 × 500
12.8 × 2.5
25.6 × 2.5
12.8 × 2.5
25.6 × 2.5
12.8 × 0.5
25.6 × 0.5
12.8 × 0.5
25.6 × 0.5
SPECTRAL RESPONSE (A/W)
S5461-256Q
0.1
0
200
400
600
800
1000
1200
WAVELENGTH (nm)
KMPDB0040EA
11
Photo ICs
Photo ICs
Photo ICs contain a photodiode and signal processing circuits, etc. in one package.
(Typ. Ta=25 °C)
Type No.
Product
Feature
Peak
Sensitivity
Wavelength
λp
Package
(nm)
S4826
Photo IC
A photodiode, amplifier and Schmitt trigger circuit are integrated.
S4810
Low-voltage operation
photo IC
Low-voltage operation: 2.2 to 7 V, designed for high sensitivity
and low current consumption.
Light modulation photo IC
Easy synchronous detection under high ambient light.
An oscillator, LED driver, photodiode and signal processing
circuit are integrated.
S5768
4.3 × 4.5
3.5 × 1.6
S4282-51
5×5
S6846
4.5 × 5.5
5×5
4.5 × 5.5
S7136
S5049
–
S5049-02
S5049-03
Photo IC for laser beam
printer
S6174
For high-power and high-speed
scanning
2.2 to 7
800
4.5 to 16
850
970
Plastic
9.5 × 5.2
800
4.5 to 5.5
Active area: 0.5 × 1.65 mm
970
Active area: 0.5 × 2.17 mm
S5482
Photo IC for range finder
Judgement of object position (near or far), Visible-light cut
package
S6841
Photo IC for optical switch
Functions of optical switch application are integrated.
▲ Low-voltage Operation Photo IC S4810
850
For low-power
Small package
S6874
12
Stable output against
changes of laser power
and temperature
(V)
4.5 to 16
4.3 × 4.5
S6986
Supply Voltage
Vcc
▲ Light Modulation Photo IC
4.5 × 5.5
900
2.2 to 3.3
820
4.5 to 5.5
Position Sensitive Detectors
PSDs
PSDs provide continuous position data of a light spot.
APPLICATIONS
• Camera auto-focus
• Distance measurement
• Proximity switching
• Offset measurement, etc.
▲ One-dimensional and two-dimensional PSDs, and signal processing
circuits
One-dimensional Types
Type No.
Active Area
(mm)
Two-dimensional Types
Package
Type No.
Type
Active Area
(mm)
Package
S4580
0.8 × 1.5
S1300
13 × 13
Ceramic (φ28 mm)
S4581
1×2
S1743
4.1 × 4.1
Metal (TO-8, φ14 mm)
S4582
1 × 2.5
S1200
13 × 13
Ceramic (φ28 mm)
S4583
1×3
S1869
27 × 27
S4584
1 × 3.5
S7105
1 × 4.2
Plastic (4.5 × 5.5 mm)
S5629
1×6
Plastic (5.2 × 9.5 mm)
S5991
S3979
1×3
Metal (TO-5)
S4744
2×3
Plastic (4.5 × 5.5 mm)
S3931
1×6
Ceramic (4.8 × 9.2 mm)
S2044
4.7 × 4.7
Metal (TO-8, φ14 mm)
S3932
1 × 12
Ceramic (4.8 × 15.2 mm)
S1880
12 × 12
Ceramic (φ28 mm)
S1662
13 × 13
Ceramic (φ28 mm)
S1881
22 × 22
S1352
2.5 × 34
Ceramic (9 × 57 mm)
S3270
1 × 37
Ceramic (5 × 55 mm)
S5730
0.7 × 24
S5681
Plastic (4 × 4.8 mm)
S5990
Duo-lateral type
Tetra-lateral
type
Pin-cushion type
Ceramic chip-carrier (4 × 36.7 mm)
Ceramic (φ52 mm)
5×5
Ceramic chip-carrier
(8.8 × 10.6 mm)
10 × 10
Ceramic chip-carrier
(14.5 × 16.5 mm)
Ceramic (φ52 mm)
S5990-01
4×4
Ceramic chip-carrier
(8.8 × 10.6 mm)
S5991-01
9×9
Ceramic chip-carrier
(14.5 × 16.5 mm)
6.375 × 6.375 /
Ceramic (50.8 × 50.8 mm)
128 element
Signal Processing Circuits for PSDs
HAMAMATSU provides six different types of signal processing circuits for
PSDs. Position signals can be obtained simply by connecting a power supply
(± 15 V) and the PSD.
When background light cannot be eliminated, PSDs with C5923 or C7563 give
error free detection.
Type No.
PSD
Dimension (mm)
C3683-01
One-dimensional PSDs (DC signal)
66 × 56 × 15
C5923
One-dimensional PSDs (AC signal)
110 × 75 × 15
C4674
Two-dimensional Pin-cushion types (DC signal)
90 × 65 × 15
C7563
Two-dimensional Pin-cushion types (AC signal)
110 × 75 × 15
C4757
Two-dimensional Duo-lateral types (DC signal)
92 × 70 × 15
C4758
Two-dimensional Tetra-lateral types (DC signal)
90 × 65 × 15
13
Sensors (Visible)
CdS Photoconductive Cells
The cells have a spectral response close to the human eye.
(Unless otherwise noted, Typ. Ta=25 °C)
Resistance
Type No.
Package
(mm)
P1114-04
TO-18
P320
Peak
Sensitivity
Wavelength 10 lx *2 0 lx *3
Min. Max. Min.
λp
*4
γ 11000
Maximum Ratings
Rise Time Fall Time
tr
tf
Power
Ambient
0 to 63 % 100 to 37 % Supply DissipTemper10 lx
10 lx
Voltage ation
ature
P
(ms)
(ms)
(Vdc)
(°C)
(mW)
(nm)
(kΩ)
(MΩ)
570
15 to 45
10
0.80
40
20
520
35 to 100
20
0.85
60
20
100
30
-30 to
+60
200
P559
540
2.9 to 8.5
0.1
0.60
100
140
φ5.5
P930
50
560
7 to 23
0.5
0.68
520
P201B
27 to 81
10
0.85
90
150
20
100
-30 to
+70
560
21 to 63
20
0.85
25
20
520
20 to 60
10
0.90
30
10
100
Metal
P201D
200
P368
TO-5
P467
14 to 43
20
4.4 to 13
20
8 to 24
5
620
P380
520
0.85
35
50
20
0.90
50
100
P534
560
1.3 to 3.7
0.05
0.55
70
100
570
1.3 to 3.7
0.3
0.75
80
40
150
P3872
540
5 to 15
1
0.80
40
30
400
P201D-5R
520
48 to 140
0.90
30
0.85
P621
100
P722-5R
12 to 36
540
P1201-01
P1201-04
1
P1395-01 *
550
P1444
35
20
30
-30 to
+50
5.3 to 15
0.5
0.70
50
40
13 to 39
0.2
0.55
100
150
-30 to
+60
100
P1445
P201D-7R
520
0.75
50 to 200
20
0.90
5 to 15
0.1
0.60
120
250
50
25
10 to 50
5
0.85
40
10
100
30
48 to 140
20
-30 to
+50
0.90
30
10
100
-30 to
+60
50
-30 to
+50
150
-30 to
+60
30
-30 to
+50
100
-30 to
+70
40
30 to 90
23 to 67
30
50
20
P380-7R
620
4.4 to 13
P722-7R
560
2.5 to 7.5
5.9 × 7.0
P1109 *1
0.5
200
0.85
35
20
0.70
50
40
100
620
15 to 45
10
0.85
40
P1195
P1202-12
550
50 to 150
20
560
3.5 to 14
0.5
P2478-01 *
P722-10R
8.5 × 10.1
P1096-06
P930-05
P930-06
14
Assembly with
Vinyl Cord
530
25 to 75
560
12 to 36
2.8 to 8.4
560
7 to 23
200
150
50
40
100
1
50
0.70
0.5
550
10
0.90
0.70
1
-30 to
+80
5
620
Resin
Coating
-30 to
+80
-30 to
+60
20 to 60
4.3 × 5.1
-30 to
+60
50
70
P1201
-30 to
+50
10
560
P1082-03
-30 to
+60
-30 to
+60
20
620
-30 to
+50
300
TO-8
P380-5R
-30 to
+60
-30 to
+70
60
P1465
-30 to
+50
50
0.75
0.5
0.68
60
200
300
100
100
150
50
40
90
-30 to
+60
-30 to
+60
-30 to
+60
-30 to
+70
*1: Dual element coating type.
Listed data are for one
element.
2:
Measured
with a tungsten
*
lamp of 2856 K.
*3: Measured 10 seconds after
removal of incident illumination of 10 lx.
*4: Gamma characteristic
between 10 lx and 100 lx.
γ
100
10
=
log (R10/R100)
log (100/10)
R10, R100 : Cell resistance
values at 10 lx and 100 lx.
Gamma characteristic variations
of ±0.10.
Infrared Detectors
InGaAs PIN Photodiodes
High-speed NIR (Near Infrared) detectors with low noise
Type No.
Cooling
Package
Active
Area
Spectral
Response
Range
λ
(mm)
(µm)
Photo Sensitivity
S
(A/W)
λ=0.78 µm λ=1.3 µm
(Typ. Ta=25 °C)
Cut-off
Terminal
Frequency Capacitance
fc
Ct
VR=1 V
VR=1 V
RL=50 Ω f=1 MHz
(cm • Hz1/2/W) (W/Hz1/2)
(MHz)
(pF)
Dark
Current
ID
VR=1 V
Shunt
Resistance
Rsh
VR=10 mV
(nA)
(MΩ)
0.08 *5
8000
2 × 10 -15
1000
4 × 10
-15
8 × 10
-15
2 × 10
-14
5 × 10
-15
λ=λp
D∗
λ=λp
NEP
λ=λp
Standard Types
G3476-01
φ0.08
-03
φ0.3
-05
Non-cooled
TO-18
φ0.5
0.9 to 1.7
G5832-01
-21 Two-stage TE-cooled
Non-cooled
-12 One-stage TE-cooled
-22 Two-stage TE-cooled
-03
Non-cooled
TO-8
φ1.0
TO-5
TO-8
φ2.0
TO-5
φ3.0
-13 One-stage TE-cooled
-23 Two-stage TE-cooled
-05
0.5 *
5
1*
-11 One-stage TE-cooled
-02
0.3 *
5
Non-cooled
TO-8
φ5.0
-15 One-stage TE-cooled
-25 Two-stage TE-cooled
5
300
5 × 10 12
100
0.9 to 1.67
0.07
1500
2 × 10
0.9 to 1.65
0.03
3000
3 × 10 13
3 × 10 -15
0.9 to 1.7
5
25
5 × 10 12
4 × 10 -14
300
2 × 10
13
1 × 10 -14
13
7 × 10 -15
0.9 to 1.67
–
0.9
0.95
0.3
13
0.9 to 1.65
0.15
600
3 × 10
0.9 to 1.7
15
10
5 × 10 12
6 × 10 -14
100
2 × 10
13
2 × 10 -14
3 × 10
13
1 × 10 -14
0.9 to 1.67
1
0.9 to 1.65
0.5
200
0.9 to 1.7
25
3
5 × 10 12
1 × 10 -13
30
2 × 10
13
3 × 10 -14
1.2
60
3 × 10
13
2 × 10 -14
0.3 *5
1000
0.9 to 1.67
2.5
0.9 to 1.65
2000 *5
1 *5
5
5 *5
5
200 *
12 *5
5
35 *
90 *5
18
150
4
550
2
1000
0.6
3500
400 *
Short-wavelength Enhanced Types
G5125-03
G5125-10
Non-cooled
TO-18
φ0.3
φ1.0
0.7 to 1.7
0.25
0.9
0.95
5 × 10 12
4 × 10 -15
2 × 10 -14
5
100
100
0.5
5 × 10 11
2 × 10 -13
10
5
1.5 × 10 12
6 × 10 -14
1*
400 *5
5
40 *
5 *5
30 *5
*5: VR=5 V
Long-wavelength Enhanced Types
G5851-01
Non-cooled
-11 One-stage TE-cooled
-21 Two-stage TE-cooled
G5852-01
Non-cooled
-11 One-stage TE-cooled
21 Two-stage TE-cooled
G5853-01
Non-cooled
-11 One-stage TE-cooled
-21 Two-stage TE-cooled
TO-18
0.9 to 1.9
TO-8
TO-18
TO-8
TO-18
TO-8
1.1
0.9 to 1.87
φ1.0
0.9 to 1.85
5
10
2.5 × 10 12
4 × 10 -14
0.9 to 2.1
500
0.1
2.5 × 10 11
4 × 10 -13
50
1
8 × 10 11
1 × 10 -13
0.9 to 2.05
25
2
1.2 × 10 12
8 × 10 -14
1.2 to 2.6
15 (µA)
0.003
5 × 10 10
2 × 10 -12
1.5 (µA)
0.03
1 × 10 11
7 × 10 -13
0.8 (µA)
0.06
2 × 10 11
5 × 10 -13
0.9 to 2.07
1.2 to 2.57
1.2 to 2.55
–
–
1.2
1.1
40
80
15
200
15
Infrared Detectors
Ge Photodiodes
Type No.
Package
Active
Area
(Unless otherwise noted, Typ. Ta=25 °C)
Spectral
Peak
Photo
Measuring Response Sensitivity Sensitivity
Range
Wavelength
S
Temperature
λ
λp
λ=λp
B2144-01
B1918-01
TO-18
TO-5
Dark
Current
ID
VR=10 mV
Rise Time Maximum
Ratings
tr
10 to 90 %
Reverse
VR=1 V
Voltage
RL=1 kΩ
VR Max.
1/2
1/2
(µs)
(cm • Hz /W) (W/Hz )
(V)
D∗
λ=λp
NEP
λ=λp
(µA)
(µA)
φ1
1.4
0.3
8 × 10 -13
3
φ2
6
1.2
1 × 10 -12
5
13
2
(mm)
B1720-02
Short Circuit
Current
Isc
100 lx
2856 K
φ3
(°C)
25
(µm)
0.8 to 1.8
(µm)
1.55
(A/W)
0.8
B1919-01
TO-8
φ5
30
4
B1920-01
Ceramic
φ10
120
20
1 × 10 11
2 × 10 -12
4 × 10 -12
10
7
11
5
35
3
Cooled Types
B2538-05
B2614-05
B6175-05
-10
TO-8
φ5
Metal Dewar
-20
-196
0.8 to 1.8
1.52
0.8
30
0.8 to 1.6
1.4
0.75
18
0.09
5 × 10 11
5 × 10 -13
0.03
1 × 10
12
3 × 10 -13
1 × 10 14
3 × 10 -15
20 (pA)
PbS/PbSe Photoconductive Detectors
Type No.
Package
Active
Area
(mm)
11
5
7
(Unless otherwise noted, Typ. Ta=25 °C)
Peak
*1
Cut-off
Measuring
Photo
Sensitivity
Wavelength
Temperature Wavelength
Sensitivity
λc
S
λp
Noise
N
D∗
(λp. 600. 1)
Rise Time
tr
0 to 63 %
Dark
Resistance
Rd
(µV)
(cm • Hz1/2/W)
(µs)
(MΩ)
2
1 × 10 11
50 to 200
Maximum Ratings
Supply
Voltage
Vs
(Vdc)
Thermistor
Power
Dissipation
100
–
(°C)
(µm)
(µm)
25
2.2
2.9
-20
2.5
3.2
2 × 10 5
5
2 × 10 11
200 to 600
1 to 10
100
0.2
2×2
25
3.8
4.8
1 × 10 3
1.5
1 × 10 9
1 to 3
0.3 to 1.5
100
–
3×3
-20
4.3
5.1
2 × 10 3
2
4 × 10 9
2 to 5
1.8 to 8
100
0.2
(V/W)
(mW)
Non-cooled Type PbS
P394
P3258-03
TO-5
1×5
3×3
1 × 10 5
5 × 10 4
0.1 to 1
0.5 to 2.5
Cooled Type PbS
P2682-01 *1
TO-8
4×5
Non-cooled Type PbSe
P791-11
TO-5
Cooled Type PbSe
P2680-01 *1
TO-8
*1: λ=λp, Vs=15 V, noise band width: 60 Hz
16
Infrared Detectors
InAs/InSb Photovoltaic Detectors, MCT (HgCdTe) Photoconductive Detectors
(Unless otherwise noted, Typ.)
Type No.
P7163
P5968-100
P5968-200
Type
Package
Active
Area
Measuring
Temperature
(mm)
(°C)
φ1
InAs
Metal dewar
InSb
Liquid
nitrogen
φ1
-196
φ2
P2750
P3257-10
Cooling
Spectral
Response
Range
λ
MCT
TO-3
TE-cooled
Metal dewar
Liquid
nitrogen
-60
1×1
-196
Peak
Photo
Shunt
Rise Time
Sensitivity Sensitivity
D∗
D∗
Resistance
tr
Wavelength
S
(500, 1200, 1) (λp, 1200, 1)
Rsh
0 to 63 %
λp
λ=λp
(cm • Hz1/2/W) (cm • Hz1/2/W)
(µm)
(µm)
(A/W)
(Ω)
1 to 3.1
3.0
1
1 × 10 5
1 to 5.5
5.3
2
1 to 5.5
4.8
2 to 14
12
1 × 10 6
1 × 10 5
–
–
(µs)
1 × 10 10
6 × 10 11
3 × 10 10
1.5 × 10 11
3 × 10 9
2 × 10 10
5
2 × 10
4 × 10
1
10
0.15
0.07
0.15
10
In addition to infrared detectors listed in this catalog, Hamamatsu provides two-color detectors K1713/K3413 series (Si/Ge, Si/InGaAs two-stage detectors) and a
photon drag detector B749 for CO2 laser detection.
InSb Photoconductive Detectors
Type No.
Package
Cooling
P6606-310
TO-3
TE-cooled
Active
Area
(Typ.)
Peak
Cut-off
Rise Time
Dark
Measuring
D∗
D∗
Sensitivity
Wavelength
tr
Resistance
(500, 1200, 1) (λp, 1200, 1)
Temperature Wavelength
λc
0 to 63 %
Rd
λp
(mm)
(°C)
(µm)
(µm)
1×1
- 60
5.5
6.1
(cm • Hz1/2/W) (cm • Hz1/2/W)
2 × 10 9
1 × 10 10
(µs)
(Ω)
Thermistor
Power
Dissipation
(mW)
1
70
0.2
InGaAs Linear Image Sensors
Type No.
G7230-128
G7230-256
Cooling
Non-cooled
G7231-128
G7231-256
G7233-128
G7233-256
Number of
Pixels
Two-stage TE-cooled
(Typ. Ta=25 °C)
Pixel Size
Active Area
(µm)
[mm (H) × mm (V)]
128
6.4 × 0.2
256
12.8 × 0.2
128
256
50 × 200
Maximum Ratings
6.4 × 0.2
Spectral
Response Range
λ
(µm)
Peak Sensitivity
Wavelength
λp
(µm)
0.9 to 1.7
1.55
6.4 × 0.2
256
12.8 × 0.2
Dark Current
ID
(pC)
(nA)
3 (pA)
10
12.8 × 0.2
128
Saturation Charge
Qsat
1.2 to 2.6
2.3
2 (-25 °C)
Multichannel detector heads are also available.
C7251: for G7230 Series, C7221: for G7231 Series, C7369: for G7233 Series
17
Infrared Detectors/Photocouplers
Pyroelectric Detectors
Type No.
Window Material
(Unless otherwise noted, Typ. Ta=25 °C)
Active
Area
Spectral
Response
Range
λ
Sensitivity
(500, 1)
Noise
Max.
NEP
(500, 1, 1)
D∗
(500, 1, 1)
Rise Time
tr
0 to 63 %
(mm)
(µm)
(V/W)
(µV/Hz1/2)
(W/Hz1/2)
(cm • Hz1/2/W)
(ms)
Temperature
Coefficient
of
Sensitivity
Max.
(%/°C)
7 to 20
1300
1.0 × 10 -9
1.5 × 10 8
8.5 × 10
-10
1.7 × 10 8
100
1.5 × 10 -9
1.0 × 10 8
Supply
Voltage
Offset
Voltage
RL=22 kΩ
(V)
(V)
0.2
3 to 15
0.2 to 1.0
100
0.2
3 to 15
0.2 to 1.0
100
0.2
3 to 15
0.2 to 1.0
Dual Element
6.5 µm long-pass filter
P7178
5 µm long-pass filter
P7178-02
2 × 1 (×2)
5 to 20
1500
7 to 20
450
15
Dual Element with Lens
P3514
6.5 µm long-pass filter
P3514-01
2 × 1 (×2)
P3514-02
5 µm long-pass filter
P3514-03
15
5 to 20
500
1.4 × 10
-9
1.1 × 10 8
2 to 20
1500
8.5 × 10 -10
1.7 × 10 8
1300
1.0 × 10
-9
1.5 × 10 8
1500
8.5 × 10 -10
1.7 × 10 8
1300
1.0 × 10 -9
1.5 × 10 8
1500
8.5 × 10
-10
1.7 × 10 8
1.0 × 10 -9
2.0 × 10 8
5.0 × 10 -10
3.0 × 10 8
1.0 × 10 -9
2.0 × 10 8
5.0 × 10
3.0 × 10 8
Single Element
P3782
Silicon
P3782-01
7 µm long-pass filter
P3782-05
5 µm long-pass filter
5 to 20
Silicon
2 to 20
P4736-01
7 µm long-pass filter
7 to 20
P4736-05
5 µm long-pass filter
P4736
P2613
Silicon
7 to 20
φ2
5 to 20
2 to 20
P2613-01
7 µm long-pass filter
7 to 20
P2613-02
4.3 µm band-pass filter
4.3
(HW=90 nm)
P2613-03
8-14 µm band-pass filter
8 to 14
4.4 µm band-pass filter
4.4
(HW=650 nm)
P2613-12
*1: λ = 4.3 µm
15
1800
1500
3900
*1
900
4100
*2
-10
*2: λ = 4.4 µm
Photocouplers
Type No.
Feature
(Typ. Ta=25 °C)
ON Resistance
RON
(kΩ)
OFF Resistance
ROFF
(MΩ)
Isolation Voltage
VISO
(Vrms)
Internal Connection
Major Application
P873-G35-380
General purpose
0.2 to 1.0
> 1.0
P873-G35-201B
High-speed response
1.0 to 5.0
>10
Electronic musical instrument
>1.0
Audio instrument,
Measuring instrument
P873-G35-552
P873-G35-687
P873-25
Low ON resistance
UL listed
0.05 to 0.2
General use
0.2 to 1.0
0.2 to 2.5
>10
0.3 to 1.0
>1.0
Triac driver, general use
>5000
P873-G35-911
Dual CdS cell output
Audio instrument,
Electronic musical
instrument
P873-13
18
Independent dual CdS cell
output
10 Max.
10
Solid State Emitters
LEDs
(Unless otherwise noted, Typ. Ta=25 °C)
Maximum Ratings
Radiant
Flux
φe
IF = 50 mA
Peak
Wavelength
λp
IF = 50 mA
Spectral
Half Width
∆λ
IF = 50 mA
Rise Time
tr
IF=50 mA
Fall Time
tf
IF=50 mA
(mW)
(nm)
(nm)
(µs)
TO-46 (Resin window)
1.8
(IF=20 mA)
660
(IF=20 mA)
20
(IF=20 mA)
L6112
TO-46 (Resin window)
5.5
(IF=20 mA)
L6112-01
TO-46 (Lens window)
2.5
(IF=20 mA)
670
(IF=20 mA)
25
(IF=20 mA)
L6112-02
TO-46 (Glass window)
2.5
(IF=20 mA)
Type No.
Package
Forward
Current
IF
Reverse
Voltage
VR
(µs)
(mA)
(V)
0.1
0.07
80
0.06
0.06
70
Pulsed
Forward
Current
IFP
(A)
Power
Dissipation
P
(mW)
GaAlAs Red LEDs
L3882
0.8
180
0.6
150
3
GaAs Infrared LEDs
L2388
L2204
L6437
TO-46 (Resin window)
Plastic
6.0
940
10
40
1.2
60
1.3
1.2
80
65
150
5
1.0
110
130
GaAlAs Infrared LEDs
L1915
TO-46 (Resin window)
L1915-01
TO-46 (Lens window)
L1915-02
TO-46 (Glass window)
L1939
TO-46 (Resin window)
L2402
L3458
Plastic
L2690
L2656
10
80
4.5
10
9.0
L4100
80
13
0.45
50
14
Plastic
6.0
L4492
TO-46 (Resin window)
8.0
L5871
Plastic
7.0
190
1.0
110
100
1.5
190
80
1.0
65
0.45
15
L4175
1.5
50
890
14
TO-46 (Resin window)
100
5
0.8
70
900
60
80
2.0
3
1.0
150
130
150
130
High-speed GaAlAs Infrared LEDs
L2683
TO-46 (Resin window)
5.0
L7558
TO-46 (Resin window)
14
L7558-01
TO-46 (Lens window)
7.0
L3989
TO-46 (Resin window)
8.0
890
60
12 (ns)
12 (ns)
80
3
0.8
850
50
7 (ns)
7 (ns)
100
5
1.0
830
40
12 (ns)
12 (ns)
80
3
0.8
0.12
0.12
80
3
0.5
150
180
GaAlAs Infrared LEDs with Microball Lenses
L2791
TO-46 (Glass window)
L2791-02
TO-46 (Lens window)
2.0
880
60
150
19
Applicable Equipment
APD Modules
The APD module is a high-sensitivity light sensor which combines an
APD (avalanche photodiode), low-noise multiplier unit, bias power
supply, and other components in a compact design. The following
types are available, classified by active area, signal bandwidth,
temperature stability, and other factors, allowing the user to select the
optimum module for the application at hand. Factors such as shape
and specifications can be tailored to fit the customer’s need.
● Standard types . . . C5331 series
These are basic APD modules, and are ideal for numerous applications using APDs.
C5331
C5460
C4777
● High-speed type . . . C5658
In order to maximize the APD speed, this APD module incorporates a
high-speed multiplier with a bandwidth of 1 GHz.
Type No.
Active Area
Frequency Bandwidth
(-3 dB)
C5331
φ1.5 mm
C5331-01
φ0.2 mm
C5331-02
φ0.5 mm
C5331-03
φ1.0 mm
C5331-04
φ3.0 mm
C5331-05
φ5.0 mm
C5331-11
φ1.0 mm
C5331-12
φ3.0 mm
C5331-13
φ5.0 mm
0.004 to 20 MHz
C5658
φ0.5 mm
1 to 1000 MHz
NEP
● High-sensitivity Types . . . C5460 series
These are APD modules designed to detect extremely faint
light.
They are also capable of detecting constant light.
Type No.
0.004 to 100 MHz
0.3 pW/Hz1/2
*1
0.4 pW/Hz1/2
*1
0.004 to 50 MHz
0.7 pW/Hz1/2
*1
0.004 to 100 MHz
0.5 pW/Hz1/2
*2
0.004 to 80 MHz
0.004 to 40 MHz
1.7 pW/Hz
1/2 *2
2.2 pW/Hz
1/2 *2
0.7 pW/Hz1/2
*1
*1: 800 nm, *2: 620 nm
C5658
Active Area
Frequency Bandwidth
(–3 dB)
C5460
φ1.5 mm
DC to 10 MHz
0.2 pW/Hz1/2
C5460-01
φ3.0 mm
DC to 100 kHz
0.02 pW/Hz1/2
● TE-cooled Type . . . C4777 series
The C4777 uses a thermoelectric cooler that controls APD
operation at a constant temperature.
Type No. Active Area
C4777
Type No.
C4777-01
Frequency Bandwidth Temperature Stability
(–3 dB)
(0 to 40 °C)
φ0.5 mm
0.01 to 100 MHz
Frequency Bandwidth
(–3 dB)
NEP
(800 nm)
φ3.0 mm
DC to 5 kHz
2 fW/Hz1/2
Hamamatsu Photosensor Amplifier C2719 is a low noise current/
voltage conversion amplifier, used to pick up very low photoelectric
current from photodiodes. It operates on internal dry batteries or
external DC supplies, eliminating noise pickup from AC lines. Three
sensitivity ranges can be selected in accordance with input signal
level.
For quick photometry, the S2281 series of Si photodiodes with BNC
type connectors and E2573 BNC-BNC coaxial cable (1 m length) are
also available as options.
The C6386 high-speed photosensor amplifier with built-in Si PIN
photodiode and an optical light guide (1 m length) is suitable for a light
source monitor that emits large electro-magnetic noise.
Type No.
Photo Sensitivity
Cut-off Frequency
Dimension
109/107/105 V/A
16/1600/1600 Hz
C6386
105/104/103 V/A
1/3/10 MHz
114(W) × 39(H)
× 90(D) mm
▲ C6386
Hybrid ICs for Pyroelectric Detectors H4741, H3651, H4018 Series
Hamamatsu provides various types of hybrid ICs and modules with builtin sensors specifically designed for use with pyroelectric detectors. A
sensor, used in the infrared detection of the human body, can easily be
constructed by connecting these parts.
Type No.
H4741
20
Characteristic
Module with pyroelectric detector, signal processing circuit and
dome-shaped multi-lenses
H3651
Signal processing circuit for pyroelectric detectors (with CdS terminal)
H4018
Comparator output with pyroelectric detector (for general use)
H4018-01
Comparator output with pyroelectric detector and low current
consumption (for battery use)
± 2 % Typ.
Active Area
Photosensor Amplifiers C2719, C6386
C2719
NEP
(800 nm)
Applicable Equipment
Portable Infrared Detecting Units C4893 (1 to 2.9 µm) and C4894 (1.5 to 4.8 µm)
These are infrared measurement units that integrate a PbS or PbSe
detector, lock-in amplifier, and an optical chopper on a compact PC
board. Using the lock-in system and modulating the incident light
using the optical chopper eliminates any influence from element and
circuit noise.
In addition, an internal temperature correction thermistor stabilizes
the element sensitivity, enabling stable output to be obtained in a
range of 0 to 50°C.
These units can be operated simply by supplying a DC power supply
(±15 V).
Type No. Cut-off Frequency Chopping Frequency
C4893
0.5 Hz
C4894
14 Hz
Lower Detection
Limit
110 pWrms
10 nWrms
16×16-element Photodiode Array Detector Head C4675
The C4675 is a 2-dimensional multichannel detector head designed to
detect visible light. In the head, a 16×16 (256) element PIN photodiode
is used.
Also, an I-V conversion amplifier is connected to each element of the
photodiode, enabling parallel signal processing.
In addition, the C4675 is designed for low power consumption, and can
be operated easily by two power sources (±15 V).
Signal Bandwidth
(–3 dB)
Gain (mag.)
C4675-102
DC to 1 kHz
1 × 108
C4675-302
DC to 3 kHz
5 × 107
C4675-103
DC to 10 kHz
1 × 107
Type No.
Power Dissipation
± 15 V
Typ.
(W)
2.5
Charge Amplifier H4083
The H4083 is a hybrid type low-noise amplifier that can be used in a
wide range of applications including soft X-ray and low to high energy
gamma-ray spectrometry. The H4083 is optimized for use with the
Hamamatsu Si PIN photodiode (S3590 and S3204 series). In particular, since the S3590 series can be mounted directly on the reverse side
of the H4083, there are no problems from increases in stray capacitance. Moreover, its compactness and light weight provide greater
freedom in design and development of a detector. Hamamatsu will
modify the existing types or will design and manufacture completely
new types with circuit components and configurations that match your
requirements.
Type No.
H4083
Feedback
Capacitance
Feedback
Resistance
2 pF
50 MΩ
Charge Gain
Equivalent Input
Noise Electrons
0.5 V/coulomb 550 electrons FWHM
21
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
Homepage: http://www.hamamatsu.com
Main Products
Sales Offices
Si Photodiodes
Si PIN Photodiodes
Si APDs
GaAsP Photodiodes
Photo ICs
Image Sensors
Position Sensitive Detectors
Phototransistors
Infrared Detectors
CdS Photoconductive Cells
Photocouplers
Solid State Emitters
ASIA:
HAMAMATSU PHOTONICS K.K.
325-6, Sunayama-cho,
Hamamatsu City, 430-8587, Japan
Telephone: (81)53-452-2141, Fax: (81)53-456-7889
Hamamatsu also supplies:
Photoelectric Tubes
Imaging Tubes
Specialty Lamps
Imaging and Processing
Systems
U.S.A.:
HAMAMATSU CORPORATION
Main Office
360 Foothill Road, P.O. BOX 6910,
Bridgewater, N.J. 08807-0910, U.S.A.
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: usa@hamamatsu.com
Western U.S.A. Office:
Suite 110, 2875 Moorpark Avenue,
San Jose, CA 95128, U.S.A.
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
United Kingdom:
HAMAMATSU PHOTONICS UK LIMITED
Lough Point, 2 Gladbeck Way, Windmill Hill,
Enfield, Middlesex EN2 7JA, United Kingdom
Telephone: (44)181-367-3560, Fax: (44)181-367-6384
France, Portugal, Belgium, Switzerland, Spain:
HAMAMATSU PHOTONICS FRANCE S.A.R.L.
8, Rue du Saule Trapu, Parc du Moulin de Massy,
91882 Massy Cedex, France
Telephone: (33)1 69 53 71 00
Fax: (33)1 69 53 71 10
Swiss Office:
Richtersmattweg 6a
CH-3054 Schüpfen, Switzerland
Telephone: (41)31/879 70 70
Fax: (41)31/879 18 74
Belgian Office:
7, Rue du Bosquet
B-1348 Louvain-La-Neuve, Belgium
Telephone: (32)10 45 63 34
Fax: (32)10 45 63 67
Hamamatsu Photonics K.K.,
Solid State Division is certified
by Lloyd’s Register Quality
Assurance.
Information in this catalog is
believed to be reliable. However,
no responsibility is assumed for
possible inaccuracies or omission.
Specifications are subject to
change without notice. No patent
rights are granted to any of the
circuits described herein.
Spanish Office:
Centro de Empresas de Nuevas Tecnologies
Parque Tecnologico del Valles
08290 CERDANYOLA, (Barcelona) Spain
Telephone: (34)93 582 44 30
Fax: (34)93 582 44 31
Netherland Office:
Postbus 536, 3760 Am Soest, Netherland
Telephone: (31)35-6029191, Fax: (31)35-6029304
North Europe:
HAMAMATSU PHOTONICS NORDEN AB
Färögatan 7,
S-164-40 Kista, Sweden
Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy:
HAMAMATSU PHOTONICS ITALIA S.R.L.
Strada della Moia, 1/E
20020 Arese (Milano), Italy
Telephone: (39)02-935 81 733
Fax: (39)02-935 81 741
Hong Kong:
S&T ENTERPRISES LTD.
Room 404, Block B,
Seaview Estate, Watson Road,
North Point, Hong Kong
Telephone: (852)25784921, Fax: (852)28073126
Taiwan:
S&T HITECH LTD.
3F-6, No. 188, Section 5, Nanking East Road
Taipei, Taiwan R.O.C.
Telephone: (886)2-2753-0188
Fax: (886)2-2746-5282
KORYO ELECTRONICS CO., LTD.
9F-7, No.79, Hsin Tai Wu Road
Sec.1, Hsi-Chin, Taipei, Taiwan, R.O.C.
Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147
Republic of Korea:
SANGKI TRADING CO., LTD.
Suite 431, Sunmyunghoi Bldg.,
24-2, Yoido-Dong, Youngdeungpo-ku,
Seoul, Republic of Korea
Telephone: (82)2-780-8515
Fax: (82)2-784-6062
Singapore:
S&T ENTERPRISES (SINGAPORE) PTE. LTD.
Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04
Kaki Bukit Industrial Estate, Singapore 417938
Telephone: (65)7458910, Fax: (65)7418201
Germany, Denmark, Netherland:
HAMAMATSU PHOTONICS DEUTSCHLAND GmbH
Arzbergerstr. 10,
D-82211 Herrsching am Ammersee, Germany
Telephone: (49)8152-375-0, Fax: (49)8152-2658
Danish Office:
Erantisvej 5, Tilst
DK-8381 Mundelstrup, Denmark
Telephone: (45)4346/6333, Fax: (45)4346/6350
© 1999 Hamamatsu Photonics K.K.
Quality, technology, and service are part of every product.
Cat. No. KOTH0001E03
Jan. 1999 CR
Printed in Japan (10,000)