ADV. MAT. SCI. & TECH. Received: Vol. 2, Nº 1 pp. 09-14, 1999 Accepted: OPTICAL ABSORPTION MEASUREMENTS ON MnIn 1.6Ga 0.4S 4 IN THE TEMPERATURE RANGE 10 – 800K ISSN 1316-2012 Published: DEPÓSITO LEGAL pp 96-0071 © 1999 12-06-99 25-06-99 31-08-99 CIPMAT OPTICAL ABSORPTION MEASUREMENTS ON MnIn1.6Ga0.4S4 IN THE TEMPERATURE RANGE 10 – 800K GRIMA GALLARDO P.(a); E. OROZCO(a); M. MUÑOZ(a); L. NIEVES(b) & J.A. HENAO(c) <peg@ciens.ula.ve> (a) Centro de Estudios en Semiconductores (C.E.S.) (b) Dpto. Física. Fac. Ciencias. Universidad de Los Andes. Mérida. Venezuela (c) Laboratorio de Cristalografía. Universidad Industrial de Santander. Bucaramanga. Colombia ABSTRACT Optical absorption measurements in the temperature range 10-800K had been performed on single crystal samples of MnIn1.6Ga0.4S4 and the optical energy gap, Eg, had been obtained as a function of temperature, T. The behavior of Eg with T had been analyzed in terms of usual theoretical models. From these analysis we found a Debye temperature of 268 ± 24K and a variation of the optical energy gap with temperature, dEg/dT = - 8.25 x 10-4 eV/K. Key Words: Semiconductors, Optical Absorption, Optical Energy Gap. MEDIDAS DE ABSORCIÓN ÓPTICA EN MnIn1.6Ga0.4S4 EN EL RANGO TEMPERATURA 10-800K RESUMEN Medidas de absorción óptica en el rango de temperatura 10-800K han sido realizadas en muestras monocristalinas de MnIn1.6Ga0.4S4, obteniéndose la brecha de energía Eg en función de la temperatura. El comportamiento de Eg con T ha sido analizado en términos de los modelos teóricos usuales. De este análisis se encontró una temperatura de Debye de 268 ± 24 K y una variación del gap con la temperatura dEg/dT = -8.25 x 10-4 eV/K. Palabras Clave: Semiconductores, Absorción Óptica, “Optical Energy Gap”. cation Mn in the compound under study may introduce interesting magneto-optical and magneto-electrical properties [8]. INTRODUCTION AND THEORY MnIn1.6Ga0.4S4 is a laminar semiconductor material from the general alloy composition MnIn2(1-x)Ga2xS4, with x=0.2 [1-3]. This alloy belongs to the most general family of IIIII2-VI4 materials, where ZnIn2S4 is one the most studied example [4-6]. The laminar character (or bidimensionality) of these materials produces important anisotropy in their properties; for example, it has been reported that the electric conductivity in ZnIn2S4 is four times higher in the perpendicular direction to the axe c, than in the parallel direction [7]. In addition, the presence of the paramagnetic The aim of this work is to analyze the variation of the optical band gap with temperature, in the high temperature range (T>300K), of the compound MnIn1.6Ga0.4Se4, using the basic model relations for temperature dependencies of optical energy gaps in semiconductors. Recently, Pässler [9] has discussed and compared these models using GaAs high precision Eg (T)-data given by Grilli et al. [10] but in the low temperature range (T<280K). FICHA: 9 GRIMA GALLARDO P.; E. OROZCO; M. MUÑOZ; L. NIEVES & J.A. HENAO.ADV. MAT. SCI. & TECH. 2(1):09-14, 1999. OPTICAL ABSORPTION MEASUREMENTS ON MnIn 1.6 Ga 0.4 S 4 IN THE TEMPERATURE RANGE 10 – 800K. GRIMA GALLARDO P.; E. OROZCO; M. MUÑOZ; L. NIEVES & J.A. HENAO.- One of these models is the Varshni [11] relation: Eg (t) = E0 - α T / (T+ ß) 2 EXPERIMENTAL TECHNIQUES AND RESULTS (1) where α and ß are fitting parameters characteristic of a given material. The theoretical basis of this much-used relation is unfortunately rather weak, since ß, which is supposed to be related to the Debye temperature [11,12], may in certain cases be negative. Moreover, at low temperature, this equation predicts quadratic temperature dependence, whereas experiments find approximate temperature independence. The parameter a represents the T → ∞ limit of the slope dEg (T)/dT. Single-crystals of MnIn1.6Ga0.4S4 were obtained by chemical vapor transport using I2 as transport agent and a temperature gradient of 80K [20]. Samples show yelloworange color, laminar character, irregular shape, 5-10 mm diameter and ~ 0.5 mm thin. Scanning Electron Microscopic (SEM) analysis indicates that orange samples are slightly deficient in S and the relative In/Ga ratio is slightly shifted towards lower values with respect to the stoichiometric values, which implies In defect and Ga excess [20]. Another empirical approach had been suggested by Viña et al [13] who considered a Bose-Einstein statistics: Eg (T) = EB – aB (1+ 2 / exp ( /T) – 1) X-ray diffraction measurements (RIGAKU, mod. D/Max III-B) gives spectra which indexes in the rhombohedral system (space group R3m, Z = 3), with lattice parameters a = 3.8580 ± 0.0005 Å and c = 37.126 ± 0.005 Å when hexagonal axes were used (Table I). This structure is similar to that found for the politype 12R4 of ZnIn2S4 and may be represented by distorted compact packing of sulfur atoms with cations occupying the tetrahedral and octahedral sites. In the perpendicular direction to the axe c, there are twelve layers of sulfur atoms following the sequence hcch in the Jagodzinski notation [18]. These layers could be separated in three groups of four layers, each one with three layers of cations: two with the cations in tetrahedral coordination and one with octahedral coordination. (2) Where the T → 0 gap limit, Eg (0), is given by EB - aB and the effective phonon energy ω is represented by a corresponding phonon temperature = ω / k. A qualitative difference between these two models arises at low temperatures and has been discussed by Pässler [9]. We will not repeat here the details but the conclusion: when they are applied to the high precision Eg (T)-data given for GaAs: Varshni’s formula (eq. 1) overestimate the measured temperature dependence whereas Viña’s et al alternative (eq. 2) underestimate. In order to overcoming this situation Pässler [9] proposed the expression: Eg (T) = Eg (0) – (α /2) [[1+ (2T/ )p ]1/p –1 ] Figure 1 shows Differential Thermal Analysis (D.T.A.) spectra obtained in a Perkin-Elmer DTA-7 equipment. It is observed two transitions in the heating, at temperatures of 1194 and 1248K, whereas in the cooling, three transition temperatures can be observed, at 1274, 1246 and 1188K. The transition at 1274K is somewhat spurious at it is seems to be too high to be the solidification point compared with the value of 1248K obtained for the melting point in the heating. The value of 1246K seems to be more adequate for the solidification point and the transition at 1274K could be attributed at some kind of impurity formed at high temperature or due to a drift of the base line produced by repositioning of the liquid drop into the quartz ampoule. (3) where p = ν + 1, and ν is the coefficient of the spectral function f ( ) ∝ ν in consideration. The parameter α has the same meaning than in Varshni’s model. The corresponding application of this expression to Grilli et al. data gives a fine fit (Figure 1 of ref. [9]) of the experimentally observed behavior. Finally, we will try to fit our data with a simplified form of the Manoogian-Leclerc expression [14,15], that has been extensively used [16-19]: Eg = E0 – U Tx - V Θ [coth (Θ/2T) – 1] (4) The first term of the equation describes the effect of thermal expansion or lattice dilation on the band gap and the second term represents the contribution from electronphonon coupling, with acoustic and optical terms being averaged. The parameter Θ = hν/k is the usual mode energy expressed as a temperature. This equation, with four parameters to fit is rather difficult to use and obtain physical meaning for the parameters. Slices obtained by cleavage, 20-30 mm in thickness were used for standard light transmission measurements in the temperature range 10-800K. We used a fully automated CARY –17I spectrophotometer with a non-polarized tungsten lamp as a light source, a cryostat (Air Products) cooled by helium gas for low temperatures (10-300K) and a homemade furnace for high temperatures (300-800K). 10 OPTICAL ABSORPTION MEASUREMENTS ON MnIn 1.6Ga 0.4S 4 IN THE TEMPERATURE RANGE 10 – 800K Line hkl Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 003 006 009 101 102 00 12 107 108 00 15 10 11 10 13 10 14 00 18 110 113 10 17 00 21 119 10 19 201 202 204 208 11 15 10 22 10 23 11 18 00 27 10 25 10 26 11 21 20 19 20 20 216 10 28 218 dobs dcal [Å] [Å] 12.405 6.197 4.126 3.326 3.287 3.095 2.827 2.712 2.475 2.374 2.171 2.077 2.063 1.929 1.907 1.828 1.767 1.747 1.686 1.668 1.663 1.645 1.572 1.521 1.506 1.453 1.409 1.375 1.358 1.313 1.303 1.269 1.242 1.237 1.232 1.218 12.374 6.187 4.125 3.327 3.288 3.093 2.827 2.711 2.475 2.374 2.171 2.077 2.062 1.929 1.906 1.828 1.768 1.747 1.686 1.669 1.664 1.644 1.572 1.521 1.506 1.453 1.409 1.375 1.357 1.313 1.303 1.270 1.242 1.237 1.232 1.218 | dobs – dcal | I/I0 For light detection, a Ge photodiode connected to a LockIn amplifier (Princeton Research mod. 5208) was used. [%] 0.032 0.011 0.001 0.001 0.001 0.002 0.000 0.001 0.000 0.000 0.000 0.000 0.001 0.000 0.001 0.000 0.001 0.000 0.000 0.001 0.001 0.001 0.000 0.000 0.000 0.000 0.000 0.000 0.001 0.000 0.000 0.001 0.000 0.000 0.000 0.000 In figure 2 we show a plot of It / I0 vs energy for 10,200, 400 and 700K (the other temperatures has been omitted for clarity). We observe a shift towards lower energies with temperature increases as it was expected. The normalized transmitted light decreases and the oscillations due to interference disappear at high T, these effects may be attributed to surface oxidation since the experiments are carried out at ambient atmosphere. Energy gap values were obtained by extrapolation of the It/I0 function to the minimum transmission value, as it was show in figure 3 for T=10K. 9 3 100 4 4 1 1 7 5 2 8 2 4 6 2 10 5 3 1 1 1 1 1 1 1 1 1 1 4 2 1 1 1 3 1 1 In table II we show the energy gap values as a function of temperature and the respective plot in figure 4. The circles are the experimental values and the lines the fitting with equations (1) to (4). The first observation is that all the models reproduces well the behavior observed in the entire temperature range. Although our data has not the accurate precision of Grilli et al data (in our case the experimental error is approximately of the order of the size of the circles in the plot), in the insert we are amplified the low temperature range. We can clearly observe that the model of Viña reproduces very well the experimental plateau, whereas the others models overestimated the values. T [K] 10 15 20 25 30 40 50 75 100 Table I. Miller indices, observed and calculated lattice spacing, and relative intensity of diffracted lines obtained for MnIn1.6Ga0.4S4. Eg [eV] T [K] Eg [eV] 2.69 2.69 2.69 2.69 2.69 2.69 2.69 2.69 2.67 150 200 250 300 400 500 600 700 800 2.64 2.61 2.58 2.55 2.47 2.39 2.31 2.22 2.10 Table II. Optical energy gap values as a function of temperature Model Eg [eV] Θ [K] α [eV/K] p U [eV/K] V [eV/K] Norm Varshni Eq. 1 2.694 246 9 x 10-4 — — — 0.0156 Viña Eq. 2 2.690 269 — — — — 0.0145 Pässler Eq. 3 2.692 291 8 x 10-4 2.20 — — 0.0143 Manoogian Eq. 4 2.692 261 — — 1.2 x 10-5 3.0 x 10-4 0.0128 Table III. Comparative fitting parameters obtained with equations (1) to (4). 11 GRIMA GALLARDO P.; E. OROZCO; M. MUÑOZ; L. NIEVES & J.A. HENAO.- Figure 1. DTA of MnIn1.6Ga0.4S4. Figure 2. Optical Transmission, It/I0 vs Energy for MnIn1.6Ga0.4S4 at 10, 200, 400 and 700K. 12 OPTICAL ABSORPTION MEASUREMENTS ON MnIn 1.6Ga 0.4S 4 IN THE TEMPERATURE RANGE 10 – 800K Figure 3. Optical Transmission for T=10K showing the criteria for obtaining the optical energy gap value. Figure 4. Optical Energy Gaps vs Temperature for MnIn1.6Ga0.4S4. Circles: Experimental values; Solid line: Varshni’s model (Eq. 1); Dashed line: Viña’s model (Eq. 2); Dotted line: Pässler’s model (Eq. 3); Dotted-Dashed line: Manoogian’s model (Eq. 4) 13 GRIMA GALLARDO P.; E. OROZCO; M. MUÑOZ; L. NIEVES & J.A. HENAO.- For the fit, the value of Eg at 800K has not been taken into account because the transmitted light has been drastically reduced at this temperature (less than 5%) and the Eg value is not reliable. In table III we compare the fitting parameters obtained by application of theoretical models. From this table we obtain that Eg (0) = 2.69 ± 0.01 eV, Θ = 268 ± 24 K and α = (8.5 ± 0.5) x 10-4 eV/K. AKNOWLEDGEMENTS This work has been suported by CDCHT - Universidad de Los Andes by grant C-949-99-05-B. REFERENCES The value p = 2.2 (Pässler’s model) is in very good agreement with typical values (2.2 to 2.6) obtained for semiconductors with bandgaps ranging between 0.3 and 3 eV [9]. Also, the values of U and V parameters in the Manoogian-Leclerc model are in the range usually observed [19, 21-23]. In order to test the value obtained for the Debye temperature (268 K) we can calculated Θ from the model of Oshcherin [24]: Θ = (cont/α1/3) Tm1/2 d1/3 / M5/6 (5) [1] N.N. Niftiev, A.G. Rustamov, O.B. Tagiev and G.M. Niftiev. Opt. Spectrosc. 75, 206 (1993). [2] V. Sagredo, M. Chourio, M.C. Moron, D. Fiorani, G. Attolini, T. Besagni and C. Pelosi. Cryst. Res. Technol. 31, 631 (1996). [3] V. Sagredo, L. Nieves and G. Attolini. Inst. Phys. Conf. Ser. No 152: Section D: Optical and Electrical Properties. 11th Conference on Ternary and Multinary Compounds, ICTMC-11, Salford, 1997. p. 677. [4] F. Hulliger. Structural Chemistry of Layer-type Phases. Dordrecht: Reidel (1976). [5] H. Haeuseler and M. Himmrich. Z. Anorg. Allg. Chem. 535, 13 (1986). [6] N. Berand and K.J. Range. J. Alloys and Comp. 205, 295 (1994). [7] A. N. Anagnostopoulos and J. Spyridelis. Phys. Stat. Sol. (a) 66, K127 (1981). [8] E. Infante. Master Thesis, Universidad de Los Andes, Mérida, Venezuela (1996). [9] R. Päessler. Phys. Stat. Sol. (b) 200, 155 (1997). 1/3 Where (cont/α ) depends of the crystal structure (174, 151 or 189 for f.c.c., b.c.c. or diamond structures, respectively); Tm is the melting point in K, d is the density and M is the mean atomic weight per lattice site. Using the respective atomic weight of the elements, the experimental lattice parameters (x-ray measurements) and the experimental melting point (DTA) we obtain Θ = 255 K with (cont/α1/3) = 189 and Θ = 235 K with (cont/α1/3) = 174, in good agreement with the experimental value of Θ = 268 K, obtained before. Unfortunately we don’t have the value of (cont/α1/3) for the structure observed for MnIn1.6Ga0.4Se4 but it would be not very different to the values of the f.c.c. or diamond structures. [10] E. Grilli, M. Guzzi, R. Zamboni and L. Pavesi. Phys. Rev. B45, 1638 (1992). [11] Y.P. Varshni. Physica 34,149 (1967). [12] C.D. Thurmond. J. Electrochem. Soc. 122, 1133 (1975). Taking account only the high temperature range (300K<T<700K) the slope dEg/dT = (-8.25± 0.5) x 10-4 eV/ K was calculated. This value would be compared with dEg/dT = (-4.23± 0.5) x 10-4 eV/K, dEg/dT = (-5.16± 0.5) x 10-4 eV/K and dEg/dT = (-5.2± 0.5) x 10-4 eV/K reported for MnIn1.2Ga0.8S4 [3], MnIn0.8Ga1.2S4 [3] and MnInGaS4 [1], respectively. It seems that dEg/dT values for MnIn 1.2 Ga 0.8S 4 , MnIn 0.8 Ga 1.2 S 4 and MnInGaS 4, are underestimated because of the temperature range used (T < 300K) where dEg/dT have a non-linear behavior. [13] L. Viña, S. Logothetidis and M. Cardona. Phys. Rev. B30, 1979 (1984). [14] A. Manoogian and A. Leclerc. Phys. Stat. Sol. (b) 92, K23 (1979). [15] A. Manoogian and J.C. Woolley. Can J. Phys. 64, 45 (1984). [16] Ch. Gnehm and A. Niggli. J. Sol. State Chem. 5, 118 (1972). [17] N. Berand and K.J. Range. J. of Alloys and Comp. 205, 295 (1994). [18] H. Jagodzinski. Acta Cryst. 2, 201 (1941). CONCLUSIONS [19] A. Rivero, M. Quintero, Ch. Power, J. González, R. Tovar and J. Ruiz. J. Elect. Mater. 26, 1428 (1997). Optical absorption measurements had been performed on MnIn1.6Ga0.4S4 single crystals in the temperature range 10-800K. DTA measurements show that there are not phase transitions in this temperature range. The behavior of the optical bandgap with the temperature was adjusted using the theoretical models of Varshni [11], Viña [13], Päessler [9] and Manoogian [14,15]. All the models fit well in the entire temperature range. From these fittings we obtained a Debye temperature of 268 ± 24K and dEg/ dT = (-8.25 ± 0.5) x 10-4 eV/K. [20] L. Nieves. Lic. thesis. Universidad de Los Andes. 1998. Unpublished. [21] M. Quintero, C. Rincon and P. Grima. J. Appl. Phys. 65, 2739 (1989). [22] S.A. López-Rivera, R.G. Goodchild, O.H. Hughes, J.C. Woolley and B.R. Pamplin. J. Can. Phys. 60, 10 (1982). [23] M. Quintero, J. González and J.C. Woolley. J. Appl. Phys. 70, 1451 (1991). [24] B.N. Oshcherin. Phys. Stat. Sol. (a) 35, K35 (1976) 14