MX-SD302133309TA8L

DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
FEATURE OVERVIEW:
PCB INFORMATION:
• Board size: 2661 x 1181 mil.
Thickness: 40 ± 4 mil.
Panel: 5 pieces PCB per panel.
8-layer board.
Impedance: 45/60(Single-ended) Ohm ± 10%, 68/88(differential) Ohm ±15%.
Pin count: 204 PIN.
IC INFORMATION:
•
•
64MBx8,
SAMSUNG, 10.0 x 11.5 mm,
INFINEON, 10.0 x 16.0 mm,
QIMONDA, 10.0 x 16.0 mm,
ELPIDA, 9.8 x 10.8 mm,
1.5V, 8K Refresh, FBGA, 106(78+28) Ball, 8 BANKS DDRIII SDRAM based.
128MBx8,
SAMSUNG, 11.0 x 18.0 mm,
MICRON, 9.0 x 15.5 mm,
HYNIX, 10.0 x 14.4 mm,
12.3 x 20.0 mm (MAX),
1.5V, 8K Refresh, FBGA, 106(78+28) Ball, 8 BANKS DDRIII SDRAM based.
MODULE INFORMATION:
•
•
•
•
PC3-12800 DDRIII SDRAM 204-PIN UNBUFFERED SO DIMM
Assembled DIMM capacity: 512MB, 1024MB.
Non-ECC DIMM organizations: 64MBx64, 128MBx64.
For PC3-12800 system.
STENCIL INFORMATION:
•
•
Top Side Stencil: B83SRCB 0.55
Bottom Side Stencil: B83SRCB 0.55
Document Ver. 1.00 - Rev. 1.00
1
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
X8 DEVICE BALL PATTERN
1
2
3
7
8
9
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VSS
VDD
NC
A
NU/
TDQS-
VSS
VDD
NC
VSS
VSSQ
DQ0
B
DM/
TDQS-
VSSQ
VDDQ
NC
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
DQ2
DQ6
VDDQ
VSS
VDD
CSBA0
A3
A5
A7
RESET-
DQS
DQSDQ4
RASCASWEBA2
A0
A2
A9
A13
C
D
E
F
G
H
J
K
L
M
N
DQ1
VDD
DQ7
CK
CKA10/AP
A15
A12/BCA1
A11
A14
DQ3
VSS
DQ5
VSS
VDD
ZQ
VREFDA
BA1
A4
A6
A8
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Document Ver. 1.00 - Rev. 1.00
NC
2
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
X8 DEVICE IC OUTLINE
12.5mm x 20.0mm
9.0mm x 15.5mm
9.8mm x 10.8mm
10.0mm x 16.0mm
10.0mm x 11.5mm
10.0mm x 14.4mm
11.0mm x 18.0mm
Document Ver. 1.00 - Rev. 1.00
3
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
64MBx64, 512MB, by 64MBx8 DDRIII SDRAM, 1-RANK, WITHOUT ECC;
128MBx64, 1024MB, by 128MBx8 DDRIII SDRAM, 1-RANK, WITHOUT ECC;
Item#
Reference
Q’ty
TOP
BOTTOM
U4~U7
Parts
DDRIII SDRAM
64MBx8,
SAMSUNG, 10.0 x 11.5 mm,
INFINEON, 10.0 x 16.0 mm,
QIMONDA, 10.0 x 16.0 mm,
ELPIDA, 9.8 x 10.8 mm,
1.5V, 8K Refresh, FBGA, 106(78+28) Ball, 8 BANKS
DDRIII SDRAM based.
128MBx8,
SAMSUNG, 11.0 x 18.0 mm,
MICRON, 9.0 x 15.5 mm,
HYNIX, 10.0 x 14.4 mm,
12.3 x 20.0 mm (MAX),
1.5V, 8K Refresh, FBGA, 106(78+28) Ball, 8 BANKS
DDRIII SDRAM based.
1
8
U0~U3
2
1
M0
3
1
4
1
CK0
5
71
C0~C18,
CC0~CC3,
CD0~CD4,
CK1, CP0,
CT0~CT6
C19~C36,
CC4~CC8,
CD5~CD8,
CT7~CT13
Capacitor, 0.1uF, +80%-20%, Y5V, 0402 size, 16V.
6
2
CV0
CV1
Capacitor, 2.2uF, +80%-20%, Y5V, 0603 size, 10V.
7
2
RK0, RK1
8
3
RT3
9
1
EEPROM 1.90 x 2.90 mm TDFN-8 Package.
CATALYST CAT34RC02VP2I-TE13
MICROCHIPS 24LC02B-I/MC
M1
Temperature Sensor 1.90 x 2.90 mm TDFN-8 Package.
MICROCHIPS MCP9805T-BE/MC
Capacitor, 3.3pF, ± 0.25pF, NPO, 0402 size, 50V.
Resistor, 30 Ohm, ± 5%, 1/16W, 0402 size.
RT7, RT8
Resistor, 36 Ohm, ± 5%, 1/16W, 0402 size.
RK2
Resistor, 75 Ohm, ± 5%, 1/16W, 0402 size.
10
8
RZ0~RZ3
RZ4~RZ7
Resistor, 240 Ohm, ± 5%, 1/16W, 0402 size.
11
24
R1~R12
R13~R24
Resistor Array, 15 Ohm, ± 5%, 1/16W, 0402 8P4R size, (R-PACK)
12
6
RT0~RT2
RT4~RT6
Resistor Array, 36 Ohm, ± 5%, 1/16W, 0402 8P4R size, (R-PACK)
13
1
Document Ver. 1.00 - Rev. 1.00
P.C.B B83SRCB 0.55, 2661 x 1181 mil, 5 PCS/PNL
4
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
CT2
RT1
CT3
RT2
RT3
CT4
RK0
RK1
CT5
CT0
CT1
RT0
TOP SIDE 1-RANK WITHOUT ECC
B83SRCB 0.55
CD2
U3
C12
CD3
C6
C9
C11
CP0
C8
CT6
R12
M0
U2
C13
R10
C18
R11
C3
R5
CD0
R4
C15
C4
R2
C14
R3
C0
R1
1
CD1
U1
R6
CD4
C1
U0
CC3
RZ3
R8
C17
R9
CC1
RZ1
C16
R7
CC0
RZ0
C7
CC2
RZ2
CK1
C10
CK0
C5
CV0
C2
203
Document Ver. 1.00 - Rev. 1.00
CC4
RZ4
R17
R18
CV1
U4
CD5
C23
C20
C24
C21
R13
C36
CD6
C19
R15
C32
R14
U5
M1
RK2
C28
R21
C34
R20
C31
R23
C35
R22
C27
CC8
CD7
U6
R19
CD8
U7
C30
R24
204
CC6
RZ6
C25
CC5
RZ5
C22
C33
R16
C26
C29
CC7
RZ7
RT4
CT8
CT7
CT13
RT8
RT7
CT12
CT11
RT6
CT10
RT5
CT9
BOTTOM SIDE 1-RANK WITHOUT ECC
2
5
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
UNBUFFERED DDRIII SDRAM DIMM MODULE 512M/1024M BYTE (MODULE SIZE BY
64MBx64, 128MBx64) BY 64MBx8, 128MBx8 DDRIII SDRAM CHIPS
COMPONENTS#:
Item#
64MBx8 DDRIII SDRAM
128MBx8 DDRIII SDRAM
MODULE SIZE
512MB 64MBx64
1024MB 128MBx64
DDRIII SDRAM
U0~U7
8 piece
U0~U7
8 piece
EEPROM
M0
1 piece
M0
1 piece
Temperature Sensor
M1
1 piece
M1
1 piece
Capacitor,
3.3pF, 0402
CK0
1 piece
CK0
1 piece
Capacitor,
0.1uF, 0402
C0~C36, CC0~CC8, CD0~CD8,
CK1, CP0, CT0~CT13
71 pieces
C0~C36, CC0~CC8, CD0~CD8,
CK1, CP0, CT0~CT13
71 pieces
Capacitor,
2.2uF, 0603
CV0~CV1
2 pieces
CV0~CV1
2 pieces
Resistor,
30 Ohm, 0402
RK0, RK1
2 pieces
RK0, RK1
2 pieces
Resistor,
36 Ohm, 0402
RT3, RT7, RT8
3 pieces
RT3, RT7, RT8
3 pieces
Resistor,
75 Ohm, 0402
RK2
1 piece
RK2
1 piece
Resistor,
240 Ohm, 0402
RZ0~RZ7
8 pieces
RZ0~RZ7
8 pieces
Resistor, Array
15 Ohm, 0402 8P4R
R1~R24
24 pieces
R1~R24
24 pieces
Resistor, Array
36 Ohm, 0402 8P4R
RT0~RT2, RT4~RT6
6 pieces
RT0~RT2, RT4~RT6
6 pieces
PCB
1 piece
1 piece
Document Ver. 1.00 - Rev. 1.00
6
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
B83SRCB 0.55 DQ MAP:
Description: DDRIII SDRAM, Single-RANK, x8-FBGA 106(78+28)Ball-based,
x64, UNBUFFERED 204-pin SO DIMM 1.0
Module
Pin No.
Module DQ
damping
RES.
5
7
15
17
4
6
16
18
0
1
2
3
4
5
6
7
R1.1-R1.8
R.2-R1.7
R2.1-R2.8
R2.2-R2.7
R13.3-R13.6
R13.4-R13.5
R14.4-R14.5
R14.3-R14.6
39
41
51
53
40
42
50
52
16
17
18
16
20
21
22
23
R4.1-R4.8
R4.2-R4.7
R5.1-R5.8
R5.2-R5.7
R16.4-R16.5
R16.3-R16.6
R17.4-R17.5
R17.3-R17.6
129
131
141
143
130
132
140
142
32
33
34
35
36
37
38
39
R7.1-R7.8
R7.2-R7.7
R8.1-R8.8
R8.2-R8.7
R19.4-R19.5
R19.3-R19.6
R20.4-R20.5
R20.3-R20.6
163
165
175
177
164
166
174
176
48
49
50
51
52
53
54
55
R10.1-R10.8
R10.2-R10.7
R11.1-R11.8
R11.2-R11.7
R22.4-R22.5
R22.3-R22.6
R23.4-R23.5
R23.3-R23.6
IC
No.
IC
DQ
U0
5
1
0
6
7
3
2
4
U1
5
1
2
6
7
3
0
4
U2
5
3
0
4
1
7
2
6
U3
5
3
0
6
7
1
2
4
Module
Pin No.
Module DQ
damping
RES.
U1
0
1
2
3
4
5
6
7
R2.3-R2.6
R2.4-R2.5
R3.3-R3.6
R3.4-R3.5
R14.2-R14.7
R14.1-R14.8
R15.2-R15.7
R15.1-R15.8
U3
0
1
2
3
4
5
6
7
R5.3-R5.6
R5.4-R5.5
R6.3-R6.6
R6.4-R6.5
R17.1-R17.8
R17.2-R17.7
R18.2-R18.7
R18.1-R18.8
U5
0
1
2
3
4
5
6
7
R8.3-R8.6
R8.4-R8.5
R9.3-R9.6
R9.4-R9.5
R20.2-R20.7
R20.1-R20.8
R21.2-R21.7
R21.1-R21.8
U7
0
1
2
3
4
5
6
7
R11.3-R11.6
R11.4-R11.5
R12.3-R12.6
R12.4-R12.5
R23.2-R23.7
R23.1-R23.8
R24.2-R24.7
R24.1-R24.8
IC
No.
IC
DQ
U4
6
0
1
3
4
2
7
5
U5
4
2
1
7
6
0
5
3
U6
4
6
1
7
2
0
3
5
U7
6
2
3
5
4
0
1
7
First check the SPD data and EEPROM. Then check the following components for other problem.
1-RANK
Document Ver. 1.00 - Rev. 1.00
Clock loading
Boot failure
CK0, RZ0~RZ7
SPD data, M0
7
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
CT2
RT1
CT3
RT2
RT3
CT4
RK0
RK1
CT5
CT0
CT1
RT0
TOP SIDE:
B83SRCB 0.55
CD2
U3
C12
CD3
C6
C9
C11
CP0
C8
CT6
R12
M0
U2
C13
R10
C18
R11
C3
R5
CD0
R4
C15
C4
R2
C14
R3
C0
R1
1
CD1
U1
R6
CD4
C1
U0
CC3
RZ3
R8
C17
R9
CC1
RZ1
C16
R7
CC0
RZ0
C7
CC2
RZ2
CK1
C10
CK0
C5
CV0
C2
203
Document Ver. 1.00 - Rev. 1.00
C22
CC4
RZ4
R17
R18
CV1
U4
CD5
C23
C20
C24
C21
R13
C36
CD6
C19
R15
C32
R14
U5
M1
RK2
C28
R21
C34
R20
C31
R23
C35
R22
C27
U6
CC8
CD7
R19
CD8
U7
C30
R24
204
CC6
RZ6
C25
CC5
RZ5
C33
R16
C26
C29
CC7
RZ7
RT4
CT8
CT7
CT13
RT8
RT7
CT12
CT11
RT6
CT10
RT5
CT9
BOTTOM SIDE:
2
8
DDR3 2GB 1333 SODIMM
MX-SD302133309TA8L
PART NUMBER DECODER
MX - S
INTERNAL CODE
FORMAT
U: 240P UNBUFFERED DIMM
R: 240P REGISTERED DIMM
V: 240P VLP REGISTERED DIMM
S: 204P UNBUFFERED SODIMM
D3 02
GENERATION
D1: DDR1
D2: DDR2
D3: DDR3
D4: DDR4
1333
09
SPEED
0800
1066
1333
1600
1866
2000
CAPACITY
01: 1G
02: 2G
04: 4G
08: 8G
T
A
CHIP MANUF.
E: ELPIDA
H: HYNIX
M: MICRON
N: NANYA
S: SAMSUNG
T: ELPIDA ETT
LATENCY
05: 5-5-5
06: 6-6-6
07: 7-7-7
08: 8-8-8
09: 9-9-9
10: 10-10-10
11: 11-11-11
8 L
COMPLIANCE
L: LEADED
R: ROHS
DRAM DIE REV.
A: 1ST GEN
B: 2ND GEN
C: 3RD GEN
D: 4TH GEN
E: 5TH GEN
F: 6TH GEN
G: 7TH GEN
H: 8TH GEN
I: 9TH GEN
J: 10TH GEN
ORGANIZATION
4: X4 ARRAY (1 RANK)
8: X8 ARRAY (1 RANK)
6: X16 ARRAY (1 RANK)
5: X4 ARRAY (2 RANK)
9: X8 ARRAY (2 RANK)
7: X16 ARRAY (2 RANK)
Document Ver. 1.00 - Rev. 1.00
9